Liquid crystal display and manufacturing method thereof

ABSTRACT

A liquid crystal display includes: an insulation substrate; a microcavity layer disposed on the insulation substrate and having a reversed taper side wall; a pixel electrode disposed in the microcavity layer on the insulation substrate; a liquid crystal layer disposed in the microcavity layer; and a common electrode which covers the liquid crystal layer.

This application claims priority to Korean Patent Application No.10-2012-0091796, filed on Aug. 22, 2012, and all the benefits accruingtherefrom under 35 U.S.C. §119, the content of which in its entirety isherein incorporated by reference.

BACKGROUND

(a) Field

Exemplary embodiments of the invention relate to a liquid crystaldisplay and a manufacturing method thereof, and more particularly, to aliquid crystal display including a liquid crystal in a microcavity, anda manufacturing method thereof.

(b) Description of the Related Art

A liquid crystal display, which is one of the most widely types of flatpanel displays currently in use, typically includes two sheets of panelswith field generating electrodes, such as a pixel electrode, a commonelectrode and the like, and a liquid crystal layer interposedtherebetween.

The liquid crystal display generates an electric field in the liquidcrystal layer by applying voltages to the field generating electrodes,and determines the direction of liquid crystal molecules of the liquidcrystal layer by the generated electric field, thus controllingpolarization of incident light to display images.

A liquid crystal display having an embedded microcavity (“EM”) structureis a display device manufactured by forming a sacrificial layer with aphotoresist, coating a support member thereon, removing the sacrificiallayer by an ashing process, and filing a liquid crystal in an emptyspace formed by removing the sacrificial layer. However, an electricfield applied to the liquid crystal layer may be distorted due a sidewall of the EM structure such that liquid crystal molecules may bemisaligned.

Also, the common electrode may have a curved structure according to thesacrificial layer such that the underlying pixel electrode may beshort-circuited or the electric field may be distorted.

An opening process of etching one side of the EM structure is typicallyperformed to remove the sacrificial layer, and thus a common electrodehas a structure connected only in one direction by the process. As aresult, when the common voltage is applied in one direction, crosstalkoccurs due to the common voltage which is changed at a portion (centerportion) distant from the applied portion.

SUMMARY

Exemplary embodiments of the invention provide a liquid crystal displayand a manufacturing method thereof to control an arrangement of liquidcrystal molecules in a predetermined direction, to maintain a structureof a common electrode not to be short-circuited along with a pixelelectrode, and to effectively prevent a distortion of an electric field,or to substantially uniformly provide a common voltage withoutcross-talk.

An exemplary embodiment of a liquid crystal display according to theinvention includes: an insulation substrate; a microcavity layerdisposed on the insulation substrate and having a reversed taper sidewall; a pixel electrode disposed in the microcavity layer on theinsulation substrate; a liquid crystal layer disposed in the microcavitylayer; and a common electrode which covers the liquid crystal layer.

In an exemplary embodiment, the liquid crystal display may furtherinclude a light blocking member disposed on the insulation substrate andhaving a tapered side wall corresponding to the reversed taper side wallof the microcavity layer.

In an exemplary embodiment, a height of the light blocking member maycorrespond to a height of the microcavity layer.

In an exemplary embodiment, the common electrode may have asubstantially planar structure.

In an exemplary embodiment, the liquid crystal display may furtherinclude a second passivation layer disposed between the light blockingmember and the common electrode, and a height of the second passivationlayer disposed on the light blocking member may be substantially thesame as the height of the microcavity layer.

In an exemplary embodiment, the common electrode may be disposedsubstantially parallel to the insulation substrate corresponding to theheight of the second passivation layer on the light blocking member.

In an exemplary embodiment, the common electrode may have a curvedstructure near the light blocking member.

In an exemplary embodiment, the common electrode may have a curved upperstructure upside near the light blocking member.

In an exemplary embodiment, the liquid crystal display may furtherinclude a roof layer which covers the common electrode.

In an exemplary embodiment, a liquid crystal injection hole may bedefined in the roof layer.

In an exemplary embodiment, the liquid crystal injection hole may bepositioned at a thin film transistor formation region.

In an exemplary embodiment, the common electrode may expose the liquidcrystal injection hole.

In an exemplary embodiment, the common electrode may have a structureextending in one direction, and may include a common electrodeconnection which connects portions of the common electrode in adirection substantially perpendicular to the one direction.

In an exemplary embodiment, the common electrode connection may bedisposed on the light blocking member and may be supported by the lightblocking member.

In an exemplary embodiment, the common electrode connection may besupported by the roof layer.

In an exemplary embodiment, the pixel electrode may include a stem and aplurality of minute branches extending from the stem.

Another alternative exemplary embodiment of a liquid crystal displayaccording to the invention includes: an insulation substrate; amicrocavity layer disposed on the insulation substrate; a pixelelectrode disposed in the microcavity layer on the insulation substrate;a liquid crystal layer disposed in the microcavity layer; a lightblocking member disposed at a side of the microcavity layer; and acommon electrode which covers the liquid crystal layer and the lightblocking member, where a height of the light blocking member issubstantially equal to or greater than a height of the microcavitylayer.

In an exemplary embodiment, the microcavity layer may have a reversedtaper side wall.

In an exemplary embodiment, the light blocking member has a taper sidewall corresponding to the reversed taper side wall of the microcavitylayer on the insulation substrate.

In an exemplary embodiment, the microcavity layer may have a taperedside wall.

In an exemplary embodiment, the light blocking member has a reversedtapered side wall corresponding to the tapered side wall of themicrocavity layer on the insulation substrate.

In exemplary embodiments, as described above, an embedded microcavity(“EM”) structure has the reversed tapered side wall, and distortion ofan electric field applied to the liquid crystal layer is therebysubstantially reduced and a portion where the liquid crystal moleculesare misaligned may not be generated such that the liquid crystalmolecules may be arranged substantially uniformly in a same direction.In exemplary embodiments, the common electrode has a substantiallyplanar structure substantially parallel to the insulation substrate suchthat the common electrode may not be short-circuited with the pixelelectrode and the electric field may not be distorted. In exemplaryembodiments, the common voltage is applied in the different direction(the direction perpendicular thereto) from the extending direction ofthe common electrode, thereby providing a liquid crystal display havinga uniform common voltage. In such embodiments, when the liquid crystalmolecules are misaligned, the upper width of the light blocking memberis widened such that misaligned portion is not be recognized by a user.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features of the invention will become more apparentby describing in further detail exemplary embodiments thereof withreference to the accompanying drawings, in which:

FIG. 1 is a top plan view of an exemplary embodiment of a liquid crystaldisplay according to the invention;

FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1;

FIG. 3 is a cross-sectional view taken along line III-III of FIG. 1;

FIG. 4 to FIG. 12B are views showing an exemplary embodiment of amanufacturing method of the liquid crystal display of FIG. 1;

FIG. 13 is a view showing a misalign state of liquid crystal moleculesin a comparative embodiment of a liquid crystal display;

FIG. 14 and FIG. 15 are views showing texture and light leakagegenerated according to a liquid crystal collision in a comparativeembodiment a liquid crystal display;

FIG. 16 is a view showing an arrangement state of liquid crystalmolecules in an exemplary embodiment of a liquid crystal displayaccording to the invention;

FIG. 17 and FIG. 18 are views showing rotation directions of liquidcrystal molecules according to a structure of a pixel electrode;

FIG. 19 is a view picturing a cross-sectional of an exemplary embodimentof a light blocking member according to the invention;

FIG. 20 and FIG. 21 are cross-sectional views of a liquid crystaldisplay according to another exemplary embodiment of the invention;

FIG. 22 is a top plan view of an alternative exemplary embodiment of aliquid crystal display according to the invention;

FIG. 23 is a cross-sectional view taken along line XXIII-XXIII of FIG.22;

FIG. 24 is a cross-sectional view taken along line XXIV-XXIV of FIG. 22;

FIG. 25 to FIG. 30D are views showing an exemplary embodiment of amanufacturing method of the liquid crystal display of FIG. 22;

FIG. 31 is a top plan view of another alternative exemplary embodimentof a liquid crystal display according to the invention;

FIG. 32 is a cross-sectional view taken along line XXXII-XXXII of FIG.31;

FIG. 33 is a cross-sectional view taken along line XXXIII-XXXIII of FIG.31.

FIG. 34A to FIG. 41 are views showing an exemplary embodiment of amanufacturing method of the liquid crystal display of FIG. 31; and

FIG. 42 is a cross-sectional view of another alternative exemplaryembodiment of a liquid crystal display according to the invention.

DETAILED DESCRIPTION

The invention will be described more fully hereinafter with reference tothe accompanying drawings, in which exemplary embodiments of theinvention are shown. This invention may, however, be embodied in manydifferent forms, and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the invention to those skilled in the art. Likereference numerals refer to like elements throughout.

It will be understood that when an element or layer is referred to asbeing “on”, “connected to” or “coupled to” another element or layer, itcan be directly on, connected or coupled to the other element or layeror intervening elements or layers may be present. In contrast, when anelement is referred to as being “directly on,” “directly connected to”or “directly coupled to” another element or layer, there are nointervening elements or layers present. Like numbers refer to likeelements throughout. As used herein, the term “and/or” includes any andall combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, components, regions, layersand/or sections, these elements, components, regions, layers and/orsections should not be limited by these terms. These terms are only usedto distinguish one element, component, region, layer or section fromanother region, layer or section. Thus, a first element, component,region, layer or section discussed below could be termed a secondelement, component, region, layer or section without departing from theteachings of the invention.

Spatially relative terms, such as “beneath”, “below”, “lower”, “above”,“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms, “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “includes”and/or “including”, when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

Exemplary embodiments are described herein with reference to crosssection illustrations that are schematic illustrations of idealizedembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, embodiments described herein should not beconstrued as limited to the particular shapes of regions as illustratedherein but are to include deviations in shapes that result, for example,from manufacturing. For example, a region illustrated or described asflat may, typically, have rough and/or nonlinear features. Moreover,sharp angles that are illustrated may be rounded. Thus, the regionsillustrated in the figures are schematic in nature and their shapes arenot intended to illustrate the precise shape of a region and are notintended to limit the scope of the claims set forth herein.

All methods described herein can be performed in a suitable order unlessotherwise indicated herein or otherwise clearly contradicted by context.The use of any and all examples, or exemplary language (e.g., “suchas”), is intended merely to better illustrate the invention and does notpose a limitation on the scope of the invention unless otherwiseclaimed. No language in the specification should be construed asindicating any non-claimed element as essential to the practice of theinvention as used herein.

Hereinafter, exemplary embodiments according to the invention will bedescribed with reference to the accompanying drawings.

Now, an exemplary embodiment of a liquid crystal display according tothe invention will be described with reference to FIG. 1 to FIG. 3.

FIG. 1 is a top plan view of an exemplary embodiment of a liquid crystaldisplay according to the invention, FIG. 2 is a cross-sectional viewtaken along line II-II of FIG. 1, and FIG. 3 is a cross-sectional viewtaken along line III-III of FIG. 1.

In an exemplary embodiment, the liquid crystal display includes aninsulation substrate 110 including transparent glass or plastic, forexample. A gate line 121 and a storage voltage line 131 are disposed,e.g., formed, on the insulation substrate 110. The gate line 121includes a first gate electrode 124 a, a second gate electrode 124 b anda third gate electrode 124 c. The storage voltage line 131 includesstorage electrodes 135 a and 135 b and a protrusion 134 protrudingtoward the gate line 121. The storage electrodes 135 a and 135 b have astructure surrounding a first subpixel electrode 192 h and a secondsubpixel electrode 192 l of a previous pixel. A horizontal portion 135 bof the storage electrode of FIG. 1 may be a wire connected with thehorizontal portion 135 b of the previous pixel. In an exemplaryembodiment, a horizontal portion 135 b of the storage electrode and thehorizontal portion 135 b of the previous pixel are not separated fromeach other, e.g., integrally formed as a single unitary and indivisibleunit.

A gate insulating layer 140 is disposed on the gate line 121 and thestorage voltage line 131. A semiconductor 151 positioned below a dataline 171, a semiconductor 155 positioned below source/drain electrodesand a semiconductor 154 positioned at a channel portion of a thin filmtransistor are disposed on the gate insulating layer 140.

A plurality of ohmic contacts (not shown) may be disposed on each of thesemiconductors 151, 154 and 155 and between the data line 171 andsource/drain electrodes.

Data conductors 171, 173 a, 173 b, 173 c, 175 a, 175 b and 175 c, whichinclude a plurality of data lines 171 including a first source electrode173 a and a second source electrode 173 b, a first drain electrode 175a, a second drain electrode 175 b, a third source electrode 173 c and athird drain electrode 175 c, are disposed on the semiconductors 151, 154and 155, and the gate insulating layer 140.

The first gate electrode 124 a, the first source electrode 173 a and thefirst drain electrode 175 a collectively define a first thin filmtransistor together with the semiconductor 154, and a channel of thethin film transistor is disposed at the semiconductor portion 154between the first source electrode 173 a and the first drain electrode175 a. Similarly, the second gate electrode 124 b, the second sourceelectrode 173 b and the second drain electrode 175 b collectively definea second thin film transistor together with the semiconductor 154, and achannel of the thin film transistor is disposed at the semiconductorportion 154 between the second source electrode 173 b and the seconddrain electrode 175 b. The third gate electrode 124 c, the third sourceelectrode 173 c and the third drain electrode 175 c collectively definea third thin film transistor together with the semiconductor 154, and achannel of the thin film transistor is disposed at the semiconductorportion 154 between the third source electrode 173 c and the third drainelectrode 175 c.

In an exemplary embodiment, the data line 171 may have a structure inwhich a width is reduced in a forming region of the thin film transistorin the vicinity of an extension 175 c′ of the third drain electrode 175c such that an interval with the adjacent wiring is substantiallymaintained, and signal interference is thereby reduced, but not beinglimited thereto.

A first passivation layer 180 is disposed on the data conductors 171,173 a, 173 b, 173 c, 175 a, 175 b and 175 c and an exposed portion ofthe semiconductor 154. The first passivation layer 180 may include aninorganic insulator such as silicon nitride (SiNx) and silicon oxide(SiOx), for example, or an organic insulator.

A color filter 230 is disposed on the passivation layer 180. Colorfilters 230 of the same color are disposed in the pixels adjacent in avertical direction (a data line direction). In an exemplary embodiment,color filters 230 and 230′ of different colors are disposed in pixelsadjacent in a horizontal direction (a gate line direction), and twocolor filters 230 and, 230′ may overlap on the data line 171. In anexemplary embodiment, the color filters 230 and 230′ may display one ofprimary colors such as three primary colors of red, green and blue, butnot being limited thereto. In an alternative exemplary embodiment, thecolor filters 230 and 230′ may display one of cyan, magenta, yellow andwhite colors.

A light blocking member (black matrix; 220) is disposed on the colorfilter 230 and 230′. The light blocking member 220 is disposedcorresponding to a region (hereafter referred to as “a transistorformation region”) where the gate line 121, the thin film transistor andthe data line 171 are disposed, and has a lattice structure havingopenings corresponding to a region where an image is displayed. Thecolor filter 230 is disposed corresponding to the opening of the lightblocking member 220. In an exemplary embodiment, the light blockingmember 220 may include a material, through which light is nottransmitted. In an exemplary embodiment, the light blocking member 220has a height corresponding to the height of a microcavity layer in whichthe liquid crystal layer 3 is provided, e.g., injected. In exemplaryembodiments, the height of the microcavity layer may be varied such thatthe height of the light blocking member 220 may be varied. In oneexemplary embodiment, for example, the light blocking member 220 mayhave a height in a range of about 2.0 micrometers (μm) to about 3.6 μm.

In an exemplary embodiment, the light blocking member 220 includes ataper structure, thereby having a tapered side wall. In exemplaryembodiments, an angle of the tapered side wall may be varied.

A second passivation layer 185 is disposed on the color filter 230 andthe light blocking member 220 to cover the color filter 230 and thelight blocking member 220. The second passivation layer 185 may includean inorganic insulator such as silicon nitride (SiNx) and silicon oxide(SiOx), for example, or an organic insulator. In an alternativeexemplary embodiment, a step may occur due to a thickness differencebetween the color filter 230 and the light blocking member 220, and thesecond passivation layer 185 including an organic insulator maysubstantially reduce or effectively remove the step.

A first contact hole 186 a and a second contact hole 186 b, which exposethe first drain electrode 175 a and extensions 175 b′ of the seconddrain electrode 175 b, respectively, are defined, e.g., formed, in thecolor filter 230, the light blocking member 220 and the passivationlayers 180 and 185. In an exemplary embodiment, a third contact hole 186c which exposes the protrusion 134 of the storage voltage line 131 andthe extension 175 c′ of the third drain electrode 175 c is defined orformed in the color filter 230, the light blocking member 220 and thepassivation layers 180 and 185.

In an exemplary embodiment, when forming the contact holes 186 a, 186 band 186 c in the light blocking member 220 and the color filter 230, theetching of the contact holes may not be efficiently preformed based onthe material of the light blocking member 220 and the color filter 230compared with the passivation layers 180 and 185. In an exemplaryembodiment, when etching the light blocking member 220 or the colorfilter 230, the light blocking member 220 or the color filter 230 may bepreviously removed at the position where the contact holes 186 a, 186 band 186 c are formed.

In an exemplary embodiment, the contact holes 186 a, 186 b and 186 c maybe formed by changing a position of the light blocking member 220 andetching only the color filter 230 and the passivation layers 180 and185.

A pixel electrode 192 including a first subpixel electrode 192 h and asecond subpixel electrode 192 l is disposed on the second passivationlayer 185. The pixel electrode 192 may include a transparent conductivematerial such as indium tin oxide (“ITO”) or indium zinc oxide (“IZO”),for example.

The first subpixel electrode 192 h and the second subpixel electrode 192l are adjacent to each other in a column direction, have an entirelyquadrangular shape, and include a cross stem including a transverse stemand a longitudinal stem crossing the transverse stem. In an exemplaryembodiment, the first subpixel electrode 192 h and the second subpixelelectrode 192 l are divided into four subregions by the transverse stemand the longitudinal stem, and each subregion includes a plurality ofminute branches.

The minute branches of the first subpixel electrode 192 h and the secondsubpixel electrode 192 l form angles in a range of about 40 degrees to45 degrees with the gate line 121 or the transverse stem. In anexemplary embodiment, the minute branches of two adjacent subregions maybe substantially perpendicular to each other. In an exemplaryembodiment, a width of the minute branch may become gradually increaseor intervals between the minute branches may be different from eachother.

The first subpixel electrode 192 h and the second subpixel electrode 192l are physically and electrically connected to the first drain electrode175 a and the second drain electrode 175 b through the contact holes 186a and 186 b, and receive data voltages from the first drain electrode175 a and the second drain electrode 175 b.

In an exemplary embodiment, a connecting member 194 electricallyconnects the extension 175 c′ of the third drain electrode 175 c and theprotrusion 134 of the storage voltage line 131 through the third contacthole 186 c. In such an embodiment, some of the data voltage applied tothe second drain electrode 175 b is divided through the third sourceelectrode 173 c and thus the magnitude of a voltage applied to thesecond subpixel electrode 192 l may be less than the magnitude of avoltage applied to the first subpixel electrode 192 h.

In an exemplary embodiment, an area of the second subpixel electrode 192l may be about twice an area of the first subpixel electrode 192 h.

In an exemplary embodiment, an opening for collecting gas dischargedfrom the color filter 230 and an overcoat that covers the correspondingopening with the same material as the pixel electrode 192 l and 192 hthereon may be disposed on the second passivation layer 185. In anexemplary embodiment, the opening and the overcoat have structures forblocking the gas discharged from the color filter 230 from beingtransferred to another element. In an alternative exemplary embodiment,the opening and the overcoat may be omitted.

A common electrode 270 is disposed on the second passivation layer 185and the pixel electrode 192, and a liquid crystal layer 3 is injectedinto a microcavity layer (305; referring to FIG. 12B). The commonelectrode 270 has a planar structure disposed substantially parallel tothe insulation substrate at a position corresponding to a top surface ofthe second passivation layer 185 positioned on the light blocking member220. In such an embodiment, the common electrode 270 is spaced apart orseparated from the pixel electrode 192 by a predetermined distance suchthat a short circuit is not generated, and the common electrode 270 isnot bent along the side of the microcavity layer 305 such that theelectric field is not distorted. The common electrode 270 may behorizontally maintained on the microcavity layer by the support of aroof layer 312 that will be described later. When the common electrode270 is horizontally maintained, a lower surface of the common electrodeis maintained substantially parallel to the insulation substrate 110. Insuch an embodiment, the common electrode 270 exposes the portion of theliquid crystal injection hole 335, thereby extending along the directionof the gate line (left and right directions).

The common electrode 270 may include a transparent conductive materialsuch as ITO or IZO, for example, and generates an electric fieldtogether with the pixel electrode 192 to control an alignment directionof liquid crystal molecules 310.

A lower insulating layer 311 is disposed on the common electrode 270. Aliquid crystal injection hole 335 may be defined in the lower insulatinglayer 311 at one side to inject the liquid crystal into the microcavitylayer 305. The lower insulating layer 311 may include the inorganicinsulating material such as silicon nitride (SiNx), for example. Theliquid crystal injection hole 335 may be used when a sacrificial layerfor forming the microcavity 305 is removed, which will be describedlater in greater detail.

In an exemplary embodiment, the microcavity layer 305 in which theliquid crystal layer 3 is injected has the side wall corresponding tothe tapered side wall of the light blocking member 220 such that theside wall of the microcavity layer 305 is reversely tapered.

In an exemplary embodiment, an alignment layer (not shown) may bedisposed below the common electrode 270 and above the pixel electrode192 to arrange the liquid crystal molecules 310 injected into themicrocavity 305. The alignment layer may include at least one ofmaterials such as polyamic acid, polysiloxane or polyimide, for example.

The liquid crystal layer 3 is disposed in the microcavity 305 (e.g., inthe alignment layer in the microcavity 305). The liquid crystalmolecules 310 are initially aligned by the alignment layer, and thealignment direction is changed according to the electric field generatedtherein. The height of the liquid crystal layer 3 corresponds to theheight of the microcavity layer 305, and the height of the microcavitylayer 305 corresponds to the height of the light blocking member 220. Inan exemplary embodiment, the height of the microcavity layer 305 issubstantially the same as the height of the second passivation layer 185positioned on the light blocking member 220. In an exemplary embodiment,the thickness of the liquid crystal layer 3 in a vertical direction maybe in a range of about 2.0 μm to about 3.6 μm. In an exemplaryembodiment, where the thickness of the liquid crystal layer 3 isincreased, the thickness of the light blocking member 220 is alsoincreased.

In an exemplary embodiment, the liquid crystal layer 3 may be injectedinto the microcavity 305 using a capillary force, and the alignmentlayer may be provided by the capillary force.

The roof layer 312 is disposed on the lower insulating layer 311. Theroof layer 312 may have a supporting function to define the microcavitylayer between the pixel electrode 192 and the common electrode 270. Inan exemplary embodiment, the roof layer 312 has the function ofsupporting the microcavity layer 305 by the predetermined thickness onthe common electrode 270, and may have the liquid crystal injection hole335 at one side such that the liquid crystal is injected into themicrocavity layer 305.

An upper insulating layer 313 is disposed on the roof layer 312. Theupper insulating layer 313 may include the inorganic insulating materialsuch as silicon nitride (SiNx). The roof layer 312 and the upperinsulating layer 313 may be patterned along with the lower insulatinglayer 311 to form the liquid crystal injection hole 335.

In an alternative exemplary embodiment, the lower insulating layer 311and the upper insulating layer 313 may be omitted.

A polarizer (not shown) is disposed below and above the insulating layer313 of the insulation substrate 110. The polarizer includes apolarization element for generating polarization and atri-acetyl-cellulose (“TAC”) layer for ensuring durability, anddirections of transmissive axes in the upper polarizer and the lowerpolarizer may be substantially perpendicular or substantially parallelto each.

An exemplary embodiment of a manufacturing method of a liquid crystal ofFIG. 1 to FIG. 3 will be described with reference to FIG. 4 to FIG. 12.

FIG. 4 to FIG. 12 are views showing an exemplary embodiment of amanufacturing method of the liquid crystal display of FIG. 1.

Firstly, FIG. 4 is a top plan view showing an exemplary embodiment of amanufacturing method of the liquid crystal display, in which a gate line121 and a storage voltage line 131 provided on an insulation substrate.

Referring to FIG. 4, a gate line 121 and a storage voltage line 131 areprovided on the insulation substrate including transparent glass,plastic, or the like. The gate line 121 and the storage voltage line 131are provided together using a same material and a same mask. In anexemplary embodiment, the gate line 121 includes a first gate electrode124 a, a second gate electrode 124 b, and a third gate electrode 124 c,and the storage voltage line 131 includes storage electrodes 135 a and135 b and a protrusion 134 protruding toward the gate line 121. Thestorage electrodes 135 a and 135 b have a structure surrounding a firstsubpixel electrode 192 h and a second subpixel electrode 192 l of aprevious pixel. Since the gate voltage is applied to the gate line 121and the storage voltage is applied to the storage voltage line 131, thegate line 121 and the storage voltage line 131 are separately provided.The storage voltage may have a predetermined voltage level or a swingvoltage level.

A gate insulating layer 140 is provided on the gate line 121 and thestorage voltage line 131.

Thereafter, as shown in FIG. 5 and FIG. 6, semiconductors 151, 154 and155, a data line 171 and source/drain electrodes 173 a, 173 b, 173 c,175 a, 175 b and 175 c are provided on the gate insulating layer 140.

FIG. 5 is a top plan view showing an exemplary embodiment of amanufacturing method of the liquid crystal display, in which thesemiconductors 151, 154, and 155 are provided, and FIG. 6 is a top planview showing an exemplary embodiment of a manufacturing method of theliquid crystal display, in which the source/drain electrodes 173 a, 173b, 173 c, 175 a, 175 b, 175 c, 175 b′ and 175 c′ are provided. In anexemplary embodiment, the semiconductors 151, 154 and 155, the data line171, and the source/drain electrodes 173 a, 173 b, 173 c, 175 a, 175 b,175 c, 175 b′ and 175 c′ are provided together by the following process.

In such an embodiment, a material for forming the semiconductors andmaterials for forming the source/drain electrodes are sequentiallylaminated. Thereafter, two patterns are provided together by one processof exposing, developing and etching through a single mask (e.g., slitmask or transflective mask). In such an embodiment, the slit ortransflective region of the mask is disposed at a position correspondingto the portion to be etched such that the semiconductor 154 positionedat the channel portion of the thin film transistor is not etched.

In an exemplary embodiment, a plurality of ohmic contacts may beprovided on each of the semiconductors 151, 154 and 155 and between thedata line 171 and the source/drain electrodes.

A first passivation layer 180 is provided on substantially an entireregion of the data conductors 171, 173 a, 173 b, 173 c, 175 a, 175 b and175 c and an exposed portion of the semiconductor 154. The firstpassivation layer 180 may include an inorganic insulator such as siliconnitride (SiNx) and silicon oxide (SiOx), for example, or an organicinsulator.

Thereafter, as shown in FIG. 7A to 7C, color filters 230 and a lightblocking member (black matrix) 220 are provided on the passivation layer180. Here, FIG. 7A is a top plan view showing an exemplary embodiment ofa manufacturing method of the liquid crystal display corresponding toFIG. 1, FIG. 7B and FIG. 7C are cross-sectional views showing anexemplary embodiment of a manufacturing method of the liquid crystaldisplay corresponding to FIGS. 2 and 3, where FIG. 7B shows an exposureprocess using a mask 500, and FIG. 7C is a cross-sectional view showingthe light blocking member 220 after an exposure and an etching.

When providing the color filter 230 and the light blocking member 220,the color filter 230 is firstly provided. The color filter 230 of onecolor is provided in the vertical direction (the data line direction),and the color filters 230 and 230′ of different colors are provided inthe pixels adjacent in the horizontal direction (the gate linedirection). In such an embodiment, the exposure, the developing and theetching process are performed for the color filter 230 for each of thecolor filters 230 and 230′ of different colors. In an exemplaryembodiment of the liquid crystal display including three primary colors,the color filter 230 is provided by performing the exposure, developingand etching processes three times. In such an embodiment, the colorfilter 230′ that is firstly provided is positioned downward and thecolor filter 230 that is later provided is positioned upward on the dataline 171, thereby overlapping each other on the data line 171.

When etching the color filter 230, the color filter 230 may bepreviously removed at the position where the contact holes 186 a, 186 band 186 c are provided.

The light blocking member 220 including the material, through whichlight is not transmitted, is provided on the color filter 230. A shownin a light blocking member 220 (slashed portion of FIG. 7A), the lightblocking member 220 is provided to have the lattice structure includingthe opening corresponding to the region for displaying the image. Thecolor filter 230 is provided in the opening.

As shown in FIG. 7A, the light blocking member 220 has a portionprovided in the horizontal direction along the transistor formationregion where the gate line 121, the storage voltage line 131 and thethin film transistor are provided, and a portion provided in thevertical direction along a region where the data line 171 is provided.

The light blocking member 220 is provided with the predetermined heightor thickness to define the microcavity layer 305 to inject the liquidcrystal layer 3. The light blocking member 220 may include the organicmaterial for the spacer and the black color pigment for blocking thelight, and FIG. 19 show the light blocking member 220 provided withvarious heights or thicknesses. In an exemplary embodiment, the lightblocking member 220 may have a thickness in a range of about 2.0 μm toabout 3.6 μm.

In an exemplary embodiment, the side wall of the light blocking member220 is tapered. In an exemplary embodiment, for forming the tapered sidewall, the mask may include a transflective pattern or a slit pattern tocontrol the exposure amount. In an alternative exemplary embodiment, thetapered side wall may be naturally provided in the etching processwithout the transflective pattern or the slit pattern of the mask.

Referring to FIG. 8A and FIG. 8B, a second passivation layer 185 isprovided on substantially an entire region of the color filter 230 andthe light blocking member 220. The second passivation layer 185 mayinclude an inorganic insulator such as silicon nitride (SiNx) andsilicon oxide (SiOx), for example, or an organic insulator.

Next, a first contact hole 186 a and a second contact hole 186 b, whichexpose the first drain electrode 175 a and extensions 175 b′ of thesecond drain electrode 175 b, respectively, are provided in the colorfilter 230, the light blocking member 220 and the passivation layers 180and 185. A third contact hole 186 c which exposes the protrusion 134 ofthe storage voltage line 131 and the extension 175 c′ of the third drainelectrode 175 c is provided in the color filter 230, the light blockingmember 220 and the passivation layers 180 and 185.

Thereafter, a pixel electrode 192 including a first subpixel electrode192 h and a second subpixel electrode 192 l is provided on the secondpassivation layer 185. In an exemplary embodiment, the pixel electrode192 may include a transparent conductive material such as ITO or IZO,for example. In such an embodiment, the first subpixel electrode 192 hand the second subpixel electrode 192 l are physically and electricallyconnected to the first drain electrode 175 a and the second drainelectrode 175 b through the contact holes 186 a and 186 b. In such anembodiment, a connecting member 194 which electrically connects theextension 175 c′ of the third drain electrode 175 c and the protrusion134 of the storage voltage line 131 through the third contact hole 186 cis also provided. In an exemplary embodiment, part of the data voltageapplied to the second drain electrode 175 b is divided through the thirdsource electrode 173 c, and thus the magnitude of the voltage applied tothe second subpixel electrode 192 l may be less than the magnitude ofthe voltage applied to the first subpixel electrode 192 h.

FIG. 8B is the cross-section of a portion of FIG. 8A corresponding toFIG. 2.

Next, as shown in FIG. 9A and FIG. 9B, a sacrificial layer 300 having anopening 301 is provided. The sacrificial layer 300 may include anorganic material such as a photoresist (“PR”), and PR is deposited andexposed, then developed and etched using a mask 500 to complete thesacrificial layer 300. The sacrificial layer 300 is provided withreference to the region where the light blocking member 220 is notprovided such that the side wall of the light blocking member 220 andthe side wall of the sacrificial layer 300 correspond to each other. Insuch an embodiment, the side wall of the sacrificial layer 300 isreversely tapered by corresponding to the tapered side wall of the lightblocking member 220. The sacrificial layer 300 has the opening 310 whichis positioned between a main body corresponding to a structure of amicrocavity and an adjacent main body at a position to form themicrocavity. A width of the opening 301 may be about 2.5 μm. In such anembodiment, the height of the sacrificial layer 300 may be substantiallythe same as the height of the second passivation layer 185 at the uppersurface of the light blocking member 220. In FIG. 9B, the PR for thesacrificial layer 300 maintained on the upper surface of the lightblocking member 220, which is exposed by the mask, is not maintained onthe light blocking member 220 after the etching. In an alternativeexemplary embodiment, the PR on the upper surface of the light blockingmember 220 may be maintained without being etched.

Next, as shown in FIG. 10A and FIG. 10B, a common electrode 270 and alower insulating layer 311 are sequentially provided. In such anembodiment, a transparent conductive material such as ITO or IZO, forexample, for forming the common electrode 270 is laminated oversubstantially the region of the display panel, and then materialincluding an inorganic insulating material such as silicon nitride(SiNx), for example, for forming the lower insulating layer 311 islaminated over substantially an entire region of the display panel. As aresult, the lower insulating layer 311 is provided to cover the commonelectrode 270.

Next, as shown in FIG. 11A, a roof layer 312 is provided. The roof layer312 may include an organic material, and the roof layer 312 exposes aregion (hereinafter referred to as “a liquid crystal injection hole openregion”) that is etched in the process of forming the liquid crystalinjection hole 335. In FIG. 11A, the liquid crystal injection hole openregion corresponds to the thin film transistor formation region, and hasa structure extending along the gate line. As shown in FIG. 11A, aportion of the common electrode 270 and the lower insulating layer 311in the corresponding region is exposed by the roof layer 312. In anexemplary embodiment, the upper surface of the lower insulating layer311 is exposed at the liquid crystal injection hole open region, whichis covered by the common electrode 270.

In such an embodiment, a material for the roof layer 312 including theorganic material is deposited in substantially the entire region of thepanel, and exposed and developed using a mask, and then the roof layer312 is provided by removing the material for the roof layer of theregion corresponding to the liquid crystal injection hole open region.In such an embodiment, the common electrode 270 and the support layer311 which are provided below the roof layer 312 are not etched andthereby exposed. In the liquid crystal injection hole open region, onlythe sacrificial layer 300, the common electrode 270 and the lowerinsulating layer 311 are provided, and in the remaining region, thesacrificial layer 300 or the opening 301, the common electrode 270, thelower insulating layer 311 and the roof layer 312 are deposited.

Next, as shown in FIG. 11B, FIG. 11C, FIG. 12A and FIG. 12B, a materialfor an upper insulating layer 313 including an inorganic insulatingmaterial such as silicon nitride (SiNx), for example, is deposited(referring to FIG. 11A and FIG. 11B), and is etched for the liquidcrystal injection hole open region (referring to FIG. 12A and FIG. 12B)to form an upper insulating layer 313 and a liquid crystal injectionhole 335.

In such an embodiment, as in FIG. 11B and FIG. 11C, the material for theupper insulating layer 313 including the inorganic insulating materialsuch as silicon nitride (SiNx) is deposited on substantially the entireregion of the display panel. As a result, as shown in FIG. 11B and FIG.11C, the material for the upper insulating layer 313 is disposed on theroof layer 312 and is also disposed in the liquid crystal injection holeopen region, which is exposed by the roof layer 312 such that thematerial for the upper insulating layer 313 is provided on the lowerinsulating layer 311 of the liquid crystal injection hole open region.In FIG. 11B, 270/311/313 means that the common electrode 270, the lowerinsulating layer 311 and the material for the upper insulating layer 313are sequentially deposited in the liquid crystal injection hole openregion. In an exemplary embodiment, the liquid crystal injection holeopen region is not removed such that the structure of the commonelectrode 270, the lower insulating layer 311, the roof layer 312 andthe material for the upper insulating layer 313 are sequentiallydeposited as shown in FIG. 11C.

Next, as shown in FIG. 12A and FIG. 12B, a process of etching the liquidcrystal injection hole open region is performed. To etch the liquidcrystal injection hole open region, the PR is provided on substantiallythe entire region, and the PR corresponding to the liquid crystalinjection hole open region is removed to form a photoresist pattern, andthe liquid crystal injection hole open region is etched according to thephotoresist pattern. In such an embodiment, the material for the upperinsulating layer 313, the lower insulating layer 311, the commonelectrode 270 and the sacrificial layer 300 are etched, and theunderlying layer is not etched. According to an exemplary embodiment,the sacrificial layer 300 may be partially etched or may not be etched.In an exemplary embodiment, the process of etching the liquid crystalinjection hole open region may be a dry etch process. In an alternativeexemplary embodiment, where an etchant capable of etching several layerstogether exists, a wet etch process may be applied.

Next, as shown in FIG. 12B, the sacrificial layer 300 is removed throughthe liquid crystal injection hole open region to form a microcavitylayer 305. In an exemplary embodiment, the sacrificial layer 300 isprovided by the PR, and a process of removing the photoresist patternprovided on the upper insulating layer 313 is thereby performedtogether. In such an embodiment, the photoresist pattern provided on theupper insulating layer 313 together with the sacrificial layer 300 isimmersed in an etchant (for example, a photoresist stripper) forremoving the photoresist pattern to be wet-etched. In such a process,the process of removing the PR provided on the upper insulating layer313 and the process of removing the sacrificial layer 300 may beperformed together, such that a manufacturing process is substantiallysimplified. In an alternative exemplary embodiment, where thesacrificial layer 300 is provided by a material other than the PR, thetwo processes may be separately performed. In such an embodiment, thesacrificial layer 300 may be dry-etched.

Thereafter, as shown in FIG. 2 and FIG. 3, an alignment layer (notshown) or a liquid crystal material is injected in the providedmicrocavity 305 using the capillary force to form the liquid crystallayer 3.

Although not shown, a process of sealing the microcavity layer 305 mayfurther be performed to effectively prevent the liquid crystal layer 3from flowing out of the microcavity layer 305.

In an exemplary embodiment, as described above, process time isshortened by removing the PR for forming the liquid crystal injectionhole open region and the sacrificial layer 300 together. In such anembodiment, the process time is shortened in a subsequent liquid crystalinjection hole opening by removing the roof layer 312 in the liquidcrystal injection hole open region when providing the roof layer 312. Insuch an embodiment, a mask used when the roof layer 312 of the liquidcrystal injection hole open region is removed in FIG. 11 and a mask usedwhen the PR is provided to etch the liquid crystal injection hole openregion in FIGS. 12A and 12B may be the same as each other. In analternative exemplary embodiment, the roof layer 312 corresponding tothe liquid crystal injection hole open region may not be removed whenthe roof layer 312 is provided, and as shown in FIGS. 12A and 12B, whenthe liquid crystal injection hole open region is etched, the roof layer312 corresponding to the liquid crystal injection hole open region mayalso be provided together.

In an alternative exemplary embodiment, the lower insulating layer 311and the upper insulating layer 313 may be omitted.

In an exemplary embodiment, a process of attaching a polarizer (notshown) below the insulation substrate 110 and above the upper insulatinglayer 313 may be further provided. The polarizer includes a polarizationelement for generating polarization and a TAC layer for ensuringdurability, and directions of transmissive axes in the upper polarizerand the lower polarizer may be substantially perpendicular orsubstantially parallel to each other.

In an exemplary embodiment, as described above, the side wall of thesacrificial layer 300 has the reversed taper structure corresponding tothe tapered side wall of the light blocking member 220. As a result, theside wall of the microcavity layer 305 has the reversed taper structuresuch that misalignment of the liquid crystal molecule 310 is effectivelyprevented, which will hereinafter be described with reference to FIG. 13to FIG. 18.

FIG. 13 is a view showing a misalignment state of liquid crystalmolecules in a comparative embodiment of a liquid crystal display.

As shown FIG. 13, in the comparative embodiment of the liquid crystaldisplay, the side wall of the microcavity layer including the liquidcrystal layer has the taper structure. In an exemplary embodiment, theside wall of the microcavity layer 305 has the reversed taper structure.In the comparative embodiment, the light blocking member is s, the rooflayer having the supporting function is disposed thereon, the side wallof the roof layer having the supporting function is disposed with thereversed taper structure, and the side wall of the microcavity layer hasthe taper structure.

The liquid crystal layer arranged at the side wall portion of themicrocavity layer of FIG. 13 has the arrangement direction that ismismatched to the arrangement direction of the liquid crystal moleculeof other portion by the inclination of the side wall.

Accordingly, the mismatch of the arrangement direction of the liquidcrystal molecules generates texture, and light leakage due to adeclination as shown in FIG. 14 and FIG. 15.

FIG. 14 and FIG. 15 are views showing texture and light leakagegenerated according to a liquid crystal collision in a comparativeembodiment of a liquid crystal display.

In an exemplary embodiment, the side wall of the reversed taperstructure of the microcavity layer 305 is provided as shown in FIG. 16.

FIG. 16 is a view showing an arrangement state of a liquid crystalmolecule in an exemplary embodiment of a liquid crystal displayaccording to the invention.

Referring to FIG. 16, the side wall of the microcavity layer 305 has thereversed taper structure such that the liquid crystal molecule near theside edge of the microcavity layer has the same arrangement directionsuch that the misalignment of the liquid crystal molecule arrangement isnot generated (referring to a region P of FIG. 16).

Referring back to FIG. 13, the common electrode 270 in a comparativeexemplary embodiment of the liquid crystal display is positioned underthe roof layer, and is moved downward between a supporting portionsupporting the roof layer 312 and the light blocking member 220 on thelight blocking member 220. In the comparative embodiment, due to thestructure of the common electrode 270, the common electrode 270 may beshorted with the underlying pixel electrode 192, and the distortion ofthe electric field may be generated at the portion where the commonelectrode 270 is bent or is moved downward toward the light blockingmember 220.

In an exemplary embodiment of the invention, the common electrode 270 ishorizontally formed, e.g., formed to maintain the planar shape thereofat a predetermined level from the insulation substrate 110, on the lightblocking member 220 such that the short circuit with the underlyingpixel electrode is effectively prevented and the electric field is notdistorted.

In an exemplary embodiment of the invention, the display device mayinclude a pixel electrode structure shown in FIG. 18.

FIG. 17 and FIG. 18 are views showing a rotation direction of liquidcrystal molecules according to a structure of a pixel electrode.

In the comparative embodiment, the liquid crystal molecules may beslanted toward the outside at the side wall portion of the microcavitylayer as shown in FIG. 13, and a pixel electrode having the structure,in which all liquid crystal molecules are similarly slanted, may beused, as shown in FIG. 17. The pixel electrode 192′ of FIG. 17 includesthe minute branches extending from four edges forming the outerperimeter at about 45 degrees and an opening 193 is formed at the centerof the pixel electrode. The opening 193 has a stem opening having across shape and a branch opening extending from the stem opening withthe angle of about 45 degrees.

In the structure of FIG. 17, the liquid crystal molecules are naturallyslanted at the outside, and if the pixel electrode is applied to thecomparative embodiment of FIG. 13, the liquid crystal molecules are allslanted at the outside on substantially the entire region as well as theside edge of the microcavity layer such that the declination is notgenerated.

In an exemplary embodiment of the invention, where the microcavity layer305 having the reversely-tapered side wall is used, the liquid crystallayer is slanted inside at the side wall portion of the microcavitylayer 305 (referring to FIG. 16), and the pixel electrode having thestructure of FIG. 18 may be used.

The pixel electrode 192 shown in FIG. 18 includes a branch electrode193′ having the cross shape at the center and minute branches extendingfrom the branch electrode 193 with the angle of about 45 degrees. In anexemplary embodiment, by the pixel electrode of FIG. 18, the liquidcrystal molecules may be naturally slanted at the inner side such thatthe misalignment of the liquid crystal molecules is not generated onsubstantially the entire region as well as the side edge region of themicrocavity layer 305.

As described above, an exemplary embodiment of the invention and thecomparative embodiment are substantially the same as each other exceptthat the structural of the side wall due to the different structures ofthe light blocking member 220. In the comparative embodiment, the lightblocking member is lower than the microcavity layer such that themicrocavity layer is not influenced. In an exemplary embodiment of theinvention, the light blocking member 220 is formed while having thetapered side wall and corresponding to the height of the microcavitylayer such that the side wall of the microcavity layer has thecorresponding reversed taper structure. In an exemplary embodiment, thelight blocking member 220 has the height or thickness in a range ofabout 2.0 μm to about 3.6 μm, and the height is shown through across-sectional photo of the light blocking member 220 in FIG. 19.

FIG. 19 is a view showing a cross-section of an exemplary embodiment ofa light blocking member according to the invention.

As shown in FIG. 19, the light blocking member 220 may have the heightor thickness in a range of about 1.5 μm to about 3.6 μm. FIG. 19 is thephoto showing that the height is about 3 μm. In an alternative exemplaryembodiment, the height or thickness may be greater than about 3 μm bycontrolling the material of the light blocking member 220 and theprocess conditions. The light blocking member 220 may have a height in arange of about 2.0 μm to about 3.6 μm, as described above, in anexemplary embodiment of the invention.

Next, an alternative exemplary embodiment of the invention will bedescribed with reference to FIG. 20 and FIG. 21. In such an embodiment,the common electrode 270 is slightly bent. In an exemplary embodiment,the curved structure of the common electrode 270 may be provided tocompensate an error in a manufacturing process. In an exemplaryembodiment, as shown in FIG. 20 and FIG. 21, the electric field may beslightly distorted, but the distortion of the electrical field is slightas the common electrode 270 is not substantially curved as in thestructure of a comparative embodiment, in which the common electrode 270is curved along the side surface of the microcavity layer 305. In suchan embodiment, the common electrode 270 is separated from the pixelelectrode 192 with the predetermined distance such that the short is notgenerated.

Hereinafter, an alternative exemplary embodiment will be described ingreater detail with reference to FIG. 20 and FIG. 21.

FIG. 20 and FIG. 21 are cross-sectional views of an alternativeexemplary embodiment of a liquid crystal display according to theinvention.

In an exemplary embodiment, as shown in FIG. 20 and FIG. 21, which arecross-sectional views corresponding to FIG. 2, the height of the commonelectrode 270 at the microcavity layer 305 is lower than the height ofthe exemplary embodiment of FIG. 2 such that the common electrode 270has the curved structure near the light blocking member 220. In such anembodiment, if the height of the upper surface of the sacrificial layer300 is lower than of the height of the upper surface of the lightblocking member 220, the common electrode 270 is curved upward near thelight blocking member 220.

FIG. 21 shows an exemplary embodiment in which an interlayer passivationlayer 180′ is provided between the color filter 230 and the lightblocking member 220.

In another alternative exemplary embodiment, the height of the commonelectrode 270 in the microcavity layer 305 is higher than the height ofthe common electrode 270 of the exemplary embodiment in FIG. 2 such thatthe common electrode 270 may be curved downward near the light blockingmember 220.

In exemplary embodiments, the curved structures of the common electrode270 may be formed in a manufacturing process, in which the heights ofthe sacrificial layer 300 and the light blocking member 220 are notsubstantially the same as each other.

As described above, the liquid crystal display may include themicrocavity layer 305 of the reversed tapered side wall.

Next, an alternative exemplary embodiment of a liquid crystal display inwhich a difference of the common voltage generated when the commonvoltage is not applied in a first direction (for example, the verticaldirection; the data line direction) is substantially reduced oreffectively removed by the structure in which the common electrode 270is connected only in a second direction (for example, the horizontaldirection; the gate line direction) while etching the liquid crystalinjection hole 335, will now be described.

FIG. 22 is a top plan view of an alternative exemplary embodiment of aliquid crystal display according to the invention, FIG. 23 is across-sectional view taken along line XXIII-XXIII of FIG. 22, and FIG.24 is a cross-sectional view taken along line XXIV-XXIV of FIG. 22.

The liquid crystal display in FIG. 22 is substantially the same as theliquid crystal display shown in FIG. 1 except for a common electrodeconnection and the light blocking member 220, for example. The same orlike elements shown in FIG. 22 have been labeled with the same referencecharacters as used above to describe the exemplary embodiments of theliquid crystal display shown in FIG. 1, and any repetitive detaileddescription thereof will hereinafter be simplified. In FIG. 23 and FIG.24, some of feature of FIG. 22 (e.g., elements corresponding to the thinfilm transistors), which are substantially the same as those in FIG. 1,are omitted for convenience of illustration.

In an alternative exemplary embodiment, as shown in FIG. 22, the commonelectrode 270 has a common electrode connection 271 for connectingportions of the common electrode 270 in the vertical direction (the dataline direction) near the liquid crystal injection hole 335 (shown inFIG. 30D).

A gate line 121 and a storage voltage line 131 are disposed on aninsulation substrate 110 including a material such as transparent glass,plastic, or the like. The gate line 121 includes a first gate electrode124 a, a second gate electrode 124 b and a third gate electrode 124 c.The storage voltage line 131 includes storage electrodes 135 a and 135 band a protrusion 134 protruding toward the gate line 121. The storageelectrodes 135 a and 135 b have a structure surrounding a first subpixelelectrode 192 h and a second subpixel electrode 192 l of the previouspixel.

A gate insulating layer 140 is disposed on the gate line 121 and thestorage voltage line 131. A semiconductor 151 positioned below a dataline 171, a semiconductor positioned below source/drain electrodes, anda semiconductor 154 positioned at a channel portion of a thin filmtransistor are disposed on the gate insulating layer 140.

A plurality of ohmic contacts (not shown) may be disposed on each of thesemiconductors 151 and 154 and between the data line 171 and thesource/drain electrodes.

In such an embodiment, data conductors 171, 173 a, 173 b, 173 c, 175 a,175 b and 175 c, which include a plurality of data lines 171 including afirst source electrode 173 a and a second source electrode 173 b, afirst drain electrode 175 a, a second drain electrode 175 b, a thirdsource electrode 173 c and a third drain electrode 175 c, are disposedon the semiconductors 151 and 154, and the gate insulating layer 140.

The first gate electrode 124 a, the first source electrode 173 a and thefirst drain electrode 175 a collectively define a first thin filmtransistor together with the semiconductor 154, and a channel of thethin film transistor is formed at the semiconductor portion 154 betweenthe first source electrode 173 a and the first drain electrode 175 a.The second gate electrode 124 b, the second source electrode 173 b andthe second drain electrode 175 b collectively define a second thin filmtransistor together with the semiconductor 154, and a channel of thethin film transistor is formed at the semiconductor portion 154 betweenthe second source electrode 173 b and the second drain electrode 175 b.The third gate electrode 124 c, the third source electrode 173 c and thethird drain electrode 175 c collectively define a third thin filmtransistor together with the semiconductor 154, and a channel of thethin film transistor is formed at the semiconductor portion 154 betweenthe third source electrode 173 c and the third drain electrode 175 c.

In such an embodiment, the data line 171 has a structure in which awidth becomes decreased in a forming region of the thin film transistorin the vicinity of an extension 175 c′ of the third drain electrode 175c such that an interval with the adjacent wiring is substantiallymaintained and signal interference is substantially reduced, but notbeing limited thereto.

A first passivation layer 180 is disposed on the data conductors 171,173 a, 173 b, 173 c, 175 a, 175 b and 175 c and an exposed portion ofthe semiconductor 154. The first passivation layer 180 may include aninorganic insulator such as silicon nitride (SiNx) and silicon oxide(SiOx), for example, or an organic insulator.

A color filter 230 is disposed on the passivation layer 180. Colorfilters 230 of the same color are disposed in the pixels adjacent in thevertical direction (the data line direction). In such an embodiment,color filters 230 and 230′ of different colors are disposed in thepixels adjacent in a horizontal direction (a gate line direction), andtwo color filters 230 and 230′ adjacent in the horizontal direction mayoverlap each other on the data line 171. The color filters 230 and 230′may display one of primary colors such as three primary colors of red,green and blue, but not being limited thereto. In an alternativeexemplary embodiment, the color filters 230 and 230′ may display one ofcyan, magenta, yellow and white colors.

A light blocking member (black matrix; 220) is disposed on the colorfilters 230 and 230′. The light blocking member 220 is disposed at aregion (hereinafter referred to as “a transistor formation region”)where the gate line 121, the thin film transistor and the data line 171are disposed, and has a lattice structure having openings correspondingto a region where an image is displayed. The color filter 230 isdisposed in the opening of the light blocking member 220. Also, thelight blocking member 220 may include a material through which light isnot transmitted. In such an embodiment, the light blocking member 220has a height corresponding to the height of a microcavity layer, inwhich the liquid crystal layer 3 (shown in FIGS. 2 and 3) is injected.In exemplary embodiments, the height of the microcavity layer may bevaried such that the height of the light blocking member 220 may bevaried. In an exemplary embodiment, the light blocking member 220 mayhave a height in a range of about 2.0 μm to about 3.6 μm.

In an exemplary embodiment, the light blocking member 220 is disposedwith a taper structure, thereby having a tapered side wall. In suchembodiments, an angle of the tapered side wall may be varied.

A second passivation layer 185 is disposed on the color filter 230 andthe light blocking member 220 to cover the color filter 230 and thelight blocking member 220. The second passivation layer 185 may includean inorganic insulator such as silicon nitride (SiNx) and silicon oxide(SiOx), for example, or an organic insulator. In an exemplaryembodiment, where a step occurs due to a thickness difference betweenthe color filter 230 and the light blocking member 220, the secondpassivation layer 185 includes the organic insulator, therebysubstantially reducing or effectively preventing the step.

A first contact hole 186 a and a second contact hole 186 b, which exposethe first drain electrode 175 a and extensions 175 b′ of the seconddrain electrode 175 b, respectively, are formed in the color filter 230,the light blocking member 220 and the passivation layers 180 and 185. Athird contact hole 186 c which exposes the protrusion 134 of the storagevoltage line 131 and the extension 175 c′ of the third drain electrode175 c is formed in the color filter 230, the light blocking member 220and the passivation layer 180.

In an exemplary embodiment, the light blocking member 220 and the colorfilter 230 further include the contact holes 186 a, 186 b and 186 c. Inan exemplary embodiment, where the etching of the contact hole may notbe efficiently performed due to the material of the light blockingmember 220 and the color filter 230 compared with the passivation layers180 and 185, when etching the light blocking member 220 or the colorfilter 230, the light blocking member 220 or the color filter 230 may bepreviously removed at the position where the contact holes 186 a, 186 band 186 c are formed.

In an exemplary embodiment, the contact holes 186 a, 186 b and 186 c maybe formed by changing a position of the light blocking member 220 andetching only the color filter 230 and the passivation layers 180 and185.

A pixel electrode 192 including a first subpixel electrode 192 h and asecond subpixel electrode 192 l is disposed on the second passivationlayer 185. The pixel electrode 192 may include a transparent conductivematerial such as ITO or IZO, for example.

The first subpixel electrode 192 h and the second subpixel electrode 192l are adjacent to each other in a column direction, have an entirelyquadrangular shape, and include a cross stem including a transverse stemand a longitudinal stem crossing the transverse stem. In such anembodiment, the first subpixel electrode 192 h and the second subpixelelectrode 192 l are divided into four subregions by the transverse stemand the longitudinal stem, and each subregion includes a plurality ofminute branches.

The minute branches of the first subpixel electrode 192 h and the secondsubpixel electrode 192 l form angles in a range of about 40 degrees to45 degrees with the gate line 121 or the transverse stem. In anexemplary embodiment, the minute branches of two adjacent subregions maybe substantially perpendicular to each other. In an exemplaryembodiment, a width of the minute branch may become gradually increasedor intervals between the minute branches 194 may be different from eachother.

The first subpixel electrode 192 h and the second subpixel electrode 192l are physically and electrically connected to the first drain electrode175 a and the second drain electrode 175 b through the contact holes 186a and 186 b, and receive data voltages from the first drain electrode175 a and the second drain electrode 175 b.

In an exemplary embodiment, a connecting member 194 electricallyconnects the extension 175 c′ of the third drain electrode 175 c and theprotrusion 134 of the storage voltage line 131 through the third contacthole 186 c. In such an embodiment, part of the data voltage applied tothe second drain electrode 175 b is divided through the third sourceelectrode 173 c, and thus the magnitude of the voltage applied to thesecond subpixel electrode 192 l may be less than the magnitude of thevoltage applied to the first subpixel electrode 192 h.

Here, an area of the second subpixel electrode 192 l may be about twicean area of the first subpixel electrode 192 h.

In an exemplary embodiment, an opening for collecting gas dischargedfrom the color filter 230 and an overcoat covering the correspondingopening with the same material as the pixel electrode 192 thereon may bedisposed on the second passivation layer 185. The opening and theovercoat block the gas discharged from the color filter 230 from beingtransferred to another element. In an alternative exemplary embodiment,the opening and the overcoat may be omitted.

A common electrode 270 is disposed on the second passivation layer 185and the pixel electrode 192, and the liquid crystal layer 3 that isinjected in the microcavity layer (305; referring to FIG. 12B). Thecommon electrode 270 has a substantially planar structure with referenceto the height of the second passivation layer 185 positioned on thelight blocking member 220. The height or level of the common electrode270 may be substantially maintained, e.g., having planar shapesubstantially parallel to the insulation substrate 110, on themicrocavity layer by the support of a roof layer 312 that will bedescribed later.

In an exemplary embodiment, the common electrode 270 is not disposed atthe portion of the liquid crystal injection hole 335, thereby having astructure that extends in the direction of the gate line (a left andright direction). In an exemplary embodiment, as shown in FIG. 22, acommon electrode connection 271 for connecting portions of the commonelectrode 270 disposed extending in the vertical direction (the dataline direction). By the common electrode connection 271, the commonvoltage is not only applied in the gate line direction and but is alsoapplied in the data line direction such that the common voltage is notchanged at the center of the display area, and the display quality isthereby substantially improved. The common electrode connection 271 issupported by the light blocking member 220 and the second passivationlayer 185.

The common electrode 270 may include a transparent conductive materialsuch as ITO or IZO, for example, and generates an electric fieldtogether with the pixel electrode 192 to control an alignment directionof liquid crystal molecules 310.

A lower insulating layer 311 is positioned on the common electrode 270.The lower insulating layer 311 may have the liquid crystal injectionhole 335 formed at one side thereof to inject the liquid crystal intothe microcavity layer 305. The lower insulating layer 311 may includethe inorganic insulating material such as silicon nitride (SiNx). Theliquid crystal injection hole 335 may be used when a sacrificial layerfor forming the microcavity 305 is removed, which will be describedlater in detail.

In an exemplary embodiment, the microcavity layer 305, in which theliquid crystal layer 3 is injected, has the side wall corresponding tothe tapered side wall of the light blocking member 220 such that theside wall of the microcavity layer 305 is reversely tapered.

In an exemplary embodiment, an alignment layer (not shown) may bedisposed below the common electrode 270 and above the pixel electrode192 to arrange the liquid crystal molecules injected into themicrocavity 305. The alignment layer may include at least one ofmaterials such as polyamic acid, polysiloxane, or polyimide, forexample.

A liquid crystal layer 3 is disposed in the microcavity 305 (e.g., inthe alignment layer disposed in the microcavity). The liquid crystalmolecules 310 are initially aligned by the alignment layer, and thealignment direction is changed according to the electric field generatedtherein. The height of the liquid crystal layer 3 corresponds to theheight of the microcavity layer 305, and the height of the microcavitylayer 305 corresponds to the height of the light blocking member 220. Inan exemplary embodiment, the height of the microcavity layer 305 issubstantially the same as the height of the second passivation layer 185positioned on the light blocking member 220. In the exemplaryembodiment, the height or thickness of the liquid crystal layer 3 may bein a range of about 2.0 μm to about 3.6 μm. In such an embodiment, wherethe thickness of the liquid crystal layer 3 is increased, the height ofthe light blocking member 220 may be increased.

The liquid crystal layer 3 disposed on the microcavity 305 may beinjected into the microcavity 305 using a capillary force, and thealignment layer may be disposed by the capillary force.

A roof layer 312 is disposed on the lower insulating layer 311. The rooflayer 312 has a predetermined thickness and supports the microcavitylayer 305. In an exemplary embodiment, a step, which may be generated bythe microcavity layer 305 and the liquid crystal layer 3, may becompensated by the roof layer 312. The roof layer 312 may include anorganic material.

An upper insulating layer 313 is disposed on the roof layer 312. Theupper insulating layer 313 may include the inorganic insulating materialsuch as silicon nitride (SiNx). The roof layer 312 and the upperinsulating layer 313 may be patterned along with the lower insulatinglayer 311 to form the liquid crystal injection hole.

According to an exemplary embodiment, the lower insulating layer 311 andthe upper insulating layer 313 may be omitted.

A polarizer (not shown) is positioned on the lower and the upperinsulating layer 313 of the insulation substrate 110. The polarizerincludes a polarization element for generating polarization and a TAClayer to improve durability, and directions of transmissive axes in anupper polarizer and a lower polarizer may be substantially perpendicularor substantially parallel to each other.

An exemplary embodiment of a manufacturing method of a liquid crystal ofFIG. 22 will be described with reference to FIG. 25 to FIG. 30.

FIG. 25 to FIG. 30 are views showing an exemplary embodiment of amanufacturing method of the liquid crystal display of FIG. 22.

Firstly, FIG. 25A corresponds to FIG. 7A, and the processes shown inFIG. 4 to FIG. 6 is applied to the exemplary embodiment of themanufacturing method of a liquid crystal of FIG. 22.

In such an embodiment, as shown in FIGS. 4 to 6, firstly, a gate line121 and a storage voltage line 131 are provided on an insulationsubstrate 110, and a gate insulating layer 140 covering the gate line121 and the storage voltage line 131 is provided thereon.

Next, semiconductors 151, 154 and 155, a data line 171, and source/drainelectrodes 173 a, 173 b, 173 c, 175 a, 175 b, 175 c, 175 b′ and 175 c′are provided on the gate insulating layer 140.

Next, a first passivation layer 180 is provided on the data conductors171, 173 a, 173 b, 173 c, 175 a, 175 b, and 175 c and an exposed portionof the semiconductor 154 all over the region. Next, color filters 230are provided on the first passivation layer 180. When etching the colorfilter 230, the color filter 230 may be previously removed at theposition where the contact holes 186 a, 186 b and 186 c are provided.

Next, as shown in FIG. 25A to FIG. 25G, a light blocking member 220including the material, through which the light is not transmitted, isprovided on the color filter 230 and the first passivation layer 180. Insuch an embodiment, the light blocking member 220 (slashed portion ofFIG. 25A) is provided with the lattice structure having the openingcorresponding to the region for displaying the image. The color filter230 is provided in the opening.

As shown in FIG. 25A, the light blocking member 220 has a portionextending in the horizontal direction along the transistor formationregion, where the gate line 121, the storage voltage line 131 and thethin film transistor are provided, and a portion extending in thevertical direction with respect to a region where the data line 171 isprovided.

An exemplary embodiment of providing the light blocking member 220 willbe described in detail with reference to FIG. 25B to FIG. 25G. Here,FIG. 25B, FIG. 25D and FIG. 25F correspond to FIG. 23, and FIG. 25C,FIG. 25E and FIG. 25G correspond to FIG. 24.

As shown in FIG. 25B and FIG. 25C, a material through which the light isnot transmitted is deposited on the first passivation layer 180 and thecolor filter 230.

Next, as shown in FIG. 25D and FIG. 25E, the material of the lightblocking member is exposed by the mask 500 to form the light blockingmember 220 of FIG. 25F and FIG. 25G. In the exemplary embodiment of FIG.22, as shown in FIG. 25F, the height of the light blocking member 220 issubstantially increased in the region (hereinafter referred to as aconnection region) where the common electrode connection 271 isprovided. In the exemplary embodiment of FIG. 22, the light blockingmember 220 is provided with the predetermined height to obtain themicrocavity layer 305, as in the light blocking member 220 provided atthe right and left side of FIG. 24. In such an embodiment, the lightblocking member 220 to obtain the microcavity layer 305 may have theheight in a range of about 2.0 μm to about 3.6 μm. In an exemplaryembodiment, the mask 500 may include a transflective region or a slitpattern where light is partially transmitted to control the height ofthe light blocking member 220.

The light blocking member 220 may include an organic material for aspacer and a black color pigment for blocking light.

In an exemplary embodiment, the side wall of the light blocking member220 is tapered. In an exemplary embodiment, the mask may include atransflective pattern or a slit pattern to control the exposure amountto provide the tapered side wall. In an alternative exemplaryembodiment, the tapered side wall may be naturally provided in theetching process without the transflective pattern or the slit pattern.

Referring to FIG. 25F and FIG. 25G, a second passivation layer 185 isprovided on substantially an entire region of the color filter 230 andthe light blocking member 220. The second passivation layer 185 mayinclude an inorganic insulator such as silicon nitride (SiNx) andsilicon oxide (SiOx), for example, or an organic insulator.

Next, a first contact hole 186 a and a second contact hole 186 b, whichexpose the first drain electrode 175 a and extensions 175 b′ of thesecond drain electrode 175 b, respectively, are provided, e.g., formed,in the color filter 230, the light blocking member 220 and thepassivation layers 180 and 185. A third contact hole 186 c which exposesthe protrusion 134 of the storage voltage line 131 and the extension 175c′ of the third drain electrode 175 c is provided in the color filter230, the light blocking member 220 and the passivation layers 180 and185.

Next, as shown in FIG. 26A to FIG. 26C, a pixel electrode 192 includinga first subpixel electrode 192 h and a second subpixel electrode 192 lis provided on the second passivation layer 185. In an exemplaryembodiment, the pixel electrode 192 may include a transparent conductivematerial such as ITO or IZO, for example. In such an embodiment, thefirst subpixel electrode 192 h and the second subpixel electrode 192 lare physically and electrically connected to the first drain electrode175 a and the second drain electrode 175 b through the contact holes 186a and 186 b. In such an embodiment, a connecting member 194 whichelectrically connects the extension 175 c′ of the third drain electrode175 c and the protrusion 134 of the storage voltage line 131 through thethird contact hole 186 c is also provided, such that part of the datavoltage applied to the second drain electrode 175 b is divided throughthe third source electrode 173 c, and the magnitude of the voltageapplied to the second subpixel electrode 192 l is thereby less than themagnitude of the voltage applied to the first subpixel electrode 192 h.

Next, as shown in FIG. 27A to 27C, a sacrificial layer 300 having anopening 301 is provided. The sacrificial layer 300 may be provided usingan organic material such as a PR, and the PR is deposited and isexposed, then developed and etched using the mask 500 to complete thesacrificial layer 300. The sacrificial layer 300 is provided in theregion where the light blocking member 220 is not provided such that theside wall of the light blocking member 220 and the side wall of thesacrificial layer 300 correspond to each other. As a result, the sidewall of the sacrificial layer 300 is reversely tapered by correspondingto the tapered side wall of the light blocking member 220. Thesacrificial layer 300 has the opening 301 which is positioned between amain body corresponding to a structure of a microcavity and an adjacentmain body at a position to form the microcavity

In an exemplary embodiment, a width of the opening 301 may be about 2.5μm, for example. In an exemplary embodiment, the height of thesacrificial layer 300 may be substantially the same as the height of thesecond passivation layer 185 at the upper surface of the light blockingmember 220.

Next, as shown in FIG. 28A to FIG. 28C, a common electrode 270 and alower insulating layer 311 are sequentially provided. In an exemplaryembodiment, a transparent conductive material such as ITO or IZO islaminated over substantially an entire region of the display panel, andthen a material of a support layer, which includes an inorganicinsulating material such as silicon nitride (SiNx), is laminated oversubstantially the entire region of the display panel, such that thelower insulating layer 311 is provided to cover the common electrode270.

Next, as shown in FIG. 29A to FIG. 29D, a roof layer 312 is provided.The roof layer 312 may include the organic material, and the roof layer312 is not provided on the region (hereinafter referred to as “a liquidcrystal injection hole open region”) that is etched in the process forproviding the liquid crystal injection hole 3. FIG. 29A shows the liquidcrystal injection hole open region corresponding to the thin filmtransistor formation region. In such an embodiment, the roof layer 312is not provided in the corresponding region, and in FIG. 29A to 29D, theexposure of the common electrode 270 and the lower insulating layer 311that are entirely provided is indirectly indicated by the referencenumerals.

In an exemplary embodiment of the providing the roof layer 312, amaterial for the roof layer including the organic material is depositedin substantially the entire region of the panel and exposed anddeveloped using a mask, and then the material for the roof layer of theregion corresponding to the liquid crystal injection hole open region isremoved. In such an embodiment, the common electrode 270 and the supportlayer 311 which are provided below the roof layer 312 are not etched andthen exposed. In the liquid crystal injection hole open region, only thesacrificial layer 300, the common electrode 270 and the lower insulatinglayer 311 are provided, and in the remaining region, the sacrificiallayer 300 or the opening 301, the common electrode 270, the lowerinsulating layer 311 and the roof layer 312 are provided.

Next, as shown FIG. 30A to FIG. 30C, a material for an upper insulatinglayer 313 including an inorganic insulating material such as siliconnitride (SiNx) is deposited.

Next, as shown in FIG. 30D, the material corresponding to the liquidcrystal injection hole open region is etched to complete the upperinsulating layer 313 and the liquid crystal injection hole 335 and toform a common electrode connection 271. In an exemplary embodiment, asshown in FIG. 30D, the liquid crystal injection hole open region is notetched at the portion where the common electrode connection 271 isprovided. As a result, the common electrodes 270 are connected to eachother in the expansion direction of the data line. The common electrodeconnection 271 is supported by the light blocking member 220 and thesecond passivation layer 185.

In an exemplary embodiment, the PR is provided on substantially theentire region to etch the liquid crystal injection hole open region, thePR corresponding to the liquid crystal injection hole open region isremoved to form a photoresist pattern, and the liquid crystal injectionhole open region is etched according to the photoresist pattern. In suchan embodiment, in the liquid crystal injection hole open region, thematerials 313 for the upper insulating layer, the lower insulating layer311, the common electrode 270, and the sacrificial layer 300 are etchedand the underlying layer is not etched. In such an embodiment, theregion where the common electrode connection 271 is provided is notetched. According to an alternative exemplary embodiment, thesacrificial layer 300 may be partially etched or may not be etched. Inan exemplary embodiment, the process of etching the liquid crystalinjection hole open region may be a dry etch process. In an alternativeexemplary embodiment, when an etchant capable of etching several layerstogether exists, a wet etch method may be applied.

Next, the sacrificial layer 300 is removed through the liquid crystalinjection hole open region to form a microcavity layer 305. In theexemplary embodiment, the sacrificial layer 300 is provided by the PR,and a process of removing the photoresist pattern provided on the upperinsulating layer 313 is performed together. In such an embodiment, thephotoresist pattern provided on the upper insulating layer 313 togetherwith the sacrificial layer 300 is immersed in an etchant (for example, aphotoresist stripper) for removing the photoresist pattern to bewet-etched. According to the above process, the process of removing thePR provided on the upper insulating layer 313 and the process ofremoving the sacrificial layer 300 may be performed together, such thata manufacturing process is substantially simplified. In an alternativeexemplary embodiment, where the sacrificial layer 300 is provided by amaterial other than the PR, the two processes may be separatelyperformed. In such an embodiment, the sacrificial layer 300 may bedry-etched.

Thereafter, an alignment layer (not shown) or a liquid crystal materialis injected in the provided microcavity 305 using the capillary force.

Although not shown, a process of sealing the microcavity layer 305 maybe performed to effectively prevent the liquid crystal layer 3 fromflowing outside of the microcavity layer 305.

In an exemplary embodiment, as shown in FIG. 22, the common electrodeconnection 271 is provided such that the liquid crystal injection holeopen region is not etched at the position corresponding to the commonelectrode connection 271.

In an exemplary embodiment, where the common electrode connection 271 isprovided as in the exemplary embodiment of FIG. 22, the common voltageis also applied in the data line direction such that a drawback that thecommon voltage is deteriorated at the center of the display area iseffectively prevented or substantially reduced.

An exemplary embodiment including a common electrode connection 271 of adifferent structure will now be described in reference with FIG. 31. Inan exemplary embodiment, as shown in FIG. 31, a roof layer 312 isdisposed on the common electrode connection 271. In such an embodiment,as shown in FIG. 31, the roof layer 312 is not entirely etched in thegate line direction and an opening 312′ on the liquid crystal injectionhole open region, and a liquid crystal injection hole 335 may beprovided at a corresponding opening 312′. In such an embodiment, acommon electrode connection 271, a lower insulating layer 311, a rooflayer 312 and an upper insulating layer 313 may be sequentiallydeposited.

The exemplary embodiment of FIG. 31 will be described in greater detail.

FIG. 31 is a top plan view of another alternative exemplary embodimentof a liquid crystal display according to the invention, FIG. 32 is across-sectional view taken along line XXXII-XXXII of FIG. 31, and FIG.33 is a cross-sectional view taken along line XXXIII-XXXIII of FIG. 31.

The liquid crystal display in FIG. 31 is substantially the same as theliquid crystal display shown in FIG. 1 except for the common electrodeconnection 271 and the light blocking member 220, for example. The sameor like elements shown in FIG. 31 have been labeled with the samereference characters as used above to describe the exemplary embodimentsof the liquid crystal display shown in FIG. 1, and any repetitivedetailed description thereof will hereinafter be simplified. In FIG. 32and FIG. 33, some of feature of FIG. 31 (e.g., elements corresponding tothe thin film transistors), which are substantially the same as those inFIG. 1, are omitted for convenience of illustration

In the exemplary embodiment of FIG. 31, the common electrode 270includes a common electrode connection 271 for connecting portions ofthe common electrode 270 in the vertical direction (the data linedirection) near the liquid crystal injection hole 335.

A gate line 121 and a storage voltage line 131 are disposed on aninsulation substrate 110 including a material, such as transparentglass, plastic, or the like. The gate line 121 includes a first gateelectrode 124 a, a second gate electrode 124 b and a third gateelectrode 124 c. The storage voltage line 131 includes storageelectrodes 135 a and 135 b and a protrusion 134 protruding toward gateline 121. The storage electrodes 135 a and 135 b have a structuresurrounding a first subpixel electrode 192 h and a second subpixelelectrode 192 l of the previous pixel.

A gate insulating layer 140 is disposed on the gate line 121 and thestorage voltage line 131. A semiconductor 151 positioned below a dataline 171, a semiconductor 155 positioned below source/drain electrodes,and a semiconductor 154 positioned at a channel portion of a thin filmtransistor are disposed on the gate insulating layer 140.

A plurality of ohmic contacts (not shown) may be disposed on each of thesemiconductors 151, 154 and 155 and between the data line 171 and thesource/drain electrodes.

In an exemplary embodiment, data conductors 171, 173 a, 173 b, 173 c,175 a, 175 b, and 175 c, which include a plurality of data lines 171including a first source electrode 173 a and a second source electrode173 b, a first drain electrode 175 a, a second drain electrode 175 b, athird source electrode 173 c and a third drain electrode 175 c, aredisposed on the semiconductors 151, 154 and 155, and the gate insulatinglayer 140.

The first gate electrode 124 a, the first source electrode 173 a and thefirst drain electrode 175 a collectively define a first thin filmtransistor together with the semiconductor 154, and a channel of thethin film transistor is disposed at the semiconductor portion 154between the first source electrode 173 a and the first drain electrode175 a. The second gate electrode 124 b, the second source electrode 173b and the second drain electrode 175 b collectively define a second thinfilm transistor together with the semiconductor 154, and a channel ofthe thin film transistor is disposed at the semiconductor portion 154between the second source electrode 173 b and the second drain electrode175 b. The third gate electrode 124 c, the third source electrode 173 cand the third drain electrode 175 c collectively define a third thinfilm transistor together with the semiconductor 154, and a channel ofthe thin film transistor is disposed at the semiconductor portion 154between the third source electrode 173 c and the third drain electrode175 c.

In such an embodiment, the data line 171 has a structure in which awidth becomes decreased in a forming region of the thin film transistorin the vicinity of an extension 175 c′ of the third drain electrode 175c such that an interval with the adjacent wiring is substantiallymaintained and signal interference is substantially reduced, but notbeing limited thereto.

A first passivation layer 180 is disposed on the data conductors 171,173 a, 173 b, 173 c, 175 a, 175 b, and 175 c and an exposed portion ofthe semiconductor 154. The first passivation layer 180 may include aninorganic insulator such as silicon nitride (SiNx) and silicon oxide(SiOx), for example, or an organic insulator.

A color filter 230 is disposed on the passivation layer 180. Colorfilters 230 of the same color are disposed in the pixels adjacent in avertical direction (a data line direction). In such an embodiment, colorfilters 230 and 230′ of different colors are disposed in the pixelsadjacent in a horizontal direction (a gate line direction), and twocolor filters 230 and 230′ adjacent in the horizontal direction mayoverlap each other on the data line 171. The color filters 230 and 230′may display one of primary colors such as three primary colors of red,green and blue, but not being limited thereto. In an alternativeexemplary embodiment, the color filters 230 and 230′ may also displayone of cyan, magenta, yellow and white colors.

A light blocking member (black matrix; 220) is disposed on the colorfilters 230 and 230′. The light blocking member 220 is disposed at aregion (hereafter referred to as “a transistor formation region”) wherethe gate line 121, the thin film transistor and the data line 171 aredisposed, and has a lattice structure having openings corresponding to aregion where an image is displayed. The color filter 230 is disposed inthe opening of the light blocking member 220. In an exemplaryembodiment, the light blocking member 220 may include a material throughwhich light is not transmitted. In such an embodiment, the lightblocking member 220 has a height corresponding to the height of amicrocavity layer into which the liquid crystal layer 3 (shown in FIGS.2 and 3) is injected. In exemplary embodiments, the height of themicrocavity layer may be varied such that the height of the lightblocking member 220 may be varied. In an exemplary embodiment, the lightblocking member 220 may have a height in a range of about 2.0 μm toabout 3.6 μm.

In an exemplary embodiment, the light blocking member 220 is disposedwith a taper structure, thereby having a tapered side wall. In suchembodiments, an angle of the tapered side wall may vary according.

A second passivation layer 185 is disposed on the color filter 230 andthe light blocking member 220 to cover the color filter 230 and thelight blocking member 220. The second passivation layer 185 may includean inorganic insulator such as silicon nitride (SiNx) and silicon oxide(SiOx), for example, or an organic insulator. In an exemplaryembodiment, where a step occurs due to a thickness difference betweenthe color filter 230 and the light blocking member 220, the secondpassivation layer 185 includes the organic insulator, therebysubstantially reducing or effectively preventing the step.

A first contact hole 186 a and a second contact hole 186 b, which exposethe first drain electrode 175 a and extensions 175 b′ of the seconddrain electrode 175 b, respectively, are disposed in the color filter230, the light blocking member 220 and the passivation layers 180 and185. A third contact hole 186 c which exposes the protrusion 134 of thestorage voltage line 131 and the extension 175 c′ of the third drainelectrode 175 c is disposed in the color filter 230, the light blockingmember 220 and the passivation layer 180.

In an exemplary embodiment, the light blocking member 220 and the colorfilter 230 further include the contact holes 186 a, 186 b, and 186 c. Inan exemplary embodiment, where the etching of the contact hole may notbe efficiently performed due to the material of the light blockingmember 220 and the color filter 230 compared with the passivation layers180 and 185, when etching the light blocking member 220 or the colorfilter 230, the light blocking member 220 or the color filter 230 may bepreviously removed at the position where the contact holes 186 a, 186 band 186 c are formed.

In an exemplary embodiment, the contact holes 186 a, 186 b and 186 c maybe disposed by changing a position of the light blocking member 220 andetching only the color filter 230 and the passivation layers 180 and185.

A pixel electrode 192 including a first subpixel electrode 192 h and asecond subpixel electrode 192 l is disposed on the second passivationlayer 185. The pixel electrode 192 may include a transparent conductivematerial such as ITO or IZO, for example.

The first subpixel electrode 192 h and the second subpixel electrode 192l are adjacent to each other in a column direction, have an entirelyquadrangular shape, and include a cross stem including a transverse stemand a longitudinal stem crossing the transverse stem. In such anembodiment, the first subpixel electrode 192 h and the second subpixelelectrode 192 l are divided into four subregions by the transverse stemand the longitudinal stem, and each subregion includes a plurality ofminute branches.

The minute branches of the first subpixel electrode 192 h and the secondsubpixel electrode 192 l form angles in a range of about 40 degrees to45 degrees with the gate line 121 or the transverse stem. Further, theminute branches of two adjacent subregions may be substantiallyperpendicular to each other. In an exemplary embodiment, a width of theminute branch may become gradually increased or intervals between theminute branches 194 may be different from each other.

The first subpixel electrode 192 h and the second subpixel electrode 192l are physically and electrically connected to the first drain electrode175 a and the second drain electrode 175 b through the contact holes 186a and 186 b, and receive data voltages from the first drain electrode175 a and the second drain electrode 175 b.

In an exemplary embodiment, a connecting member 194 electricallyconnects the extension 175 c′ of the third drain electrode 175 c and theprotrusion 134 of the storage voltage line 131 through the third contacthole 186 c. In such an embodiment, some of the data voltages applied tothe second drain electrode 175 b are divided through the third sourceelectrode 173 c and thus the magnitude of the voltage applied to thesecond subpixel electrode 192 l may be less than the magnitude of thevoltage applied to the first subpixel electrode 192 h.

Here, an area of the second subpixel electrode 192 l may be about twicean area of the first subpixel electrode 192 h.

In an exemplary embodiment, an opening for collecting gas dischargedfrom the color filter 230 and an overcoat covering the correspondingopening with the same material as the pixel electrode 192 thereon may bedisposed on the second passivation layer 185. The opening and theovercoat block the gas discharged from the color filter 230 from beingtransferred to another element. In an alternative exemplary embodiment,the opening and the overcoat may be omitted.

A common electrode 270 is disposed on the second passivation layer 185and the pixel electrode 192, and the liquid crystal layer 3 is injectedinto the microcavity layer (305; referring to FIG. 12B). The commonelectrode 270 includes a planar structure substantially parallel to theinsulation substrate 110 at the height of the second passivation layer185 positioned on the light blocking member 220. The height or level ofthe common electrode 270 may be substantially maintained on themicrocavity layer by the support of the roof layer 312 that will bedescribed later.

In an exemplary embodiment, the common electrode 270 is not disposed atthe portion of the liquid crystal injection hole 335 thereby having astructure that extends in the direction of the gate line (a left andright direction). In an exemplary embodiment, as shown in FIG. 31, thecommon electrode connection 271 for connecting the common electrode 270in the vertical direction (the data line direction) is provided. Thecommon electrode connection 271 is disposed on the light blocking member220 such that the common electrode connection 271 is not supported bythe light blocking member 220 and is disposed under the lower insulatinglayer 311, the roof layer 312 and the upper insulating layer 313,thereby being supported by the roof layer 312. In an exemplaryembodiment, as shown in FIG. 31, the common electrode connection 271 issupported by the lower insulating layer 311, the roof layer 312 and theupper insulating layer 313.

By the common electrode connection 271, the common voltage is not onlyapplied in the gate line direction and but is also applied in the dataline direction such that the common voltage is not changed on the centerof the display area, and the display quality is thereby substantiallyimproved.

The common electrode 270 may include a transparent conductive materialsuch as ITO or IZO, for example, and generates an electric fieldtogether with the pixel electrode 192 to control an alignment directionof liquid crystal molecules 310.

A lower insulating layer 311 is positioned on the common electrode 270.The lower insulating layer 311 may have the liquid crystal injectionhole 335 disposed at one side to inject the liquid crystal in themicrocavity layer 305. The lower insulating layer 311 may include theinorganic insulating material such as silicon nitride (SiNx). The liquidcrystal injection hole 335 may be used even when a sacrificial layer forforming the microcavity 305 is removed, which will be described later indetail.

In an exemplary embodiment, the microcavity layer 305 in which theliquid crystal layer 3 is injected has the side wall corresponding tothe tapered side wall of the light blocking member 220 such that theside wall of the microcavity layer 305 is reversely tapered.

In an exemplary embodiment, an alignment layer (not shown) may bedisposed below the common electrode 270 and above the pixel electrode192 to arrange the liquid crystal molecules injected into themicrocavity 305. The alignment layer may include at least one ofmaterials such as polyamic acid, polysiloxane or polyimide.

A liquid crystal layer 3 is disposed in the microcavity 305 (e.g., inthe alignment layer disposed in the microcavity 305). The liquid crystalmolecules 310 are initially aligned by the alignment layer, and thealignment direction is changed according to the electric field generatedtherein. The height of the liquid crystal layer corresponds to theheight of the microcavity layer 305, and the height of the microcavitylayer 305 corresponds to the height of the light blocking member 220. Inan exemplary embodiment, the height of the microcavity layer 305 issubstantially the same as the height of the second passivation layer 185positioned on the light blocking member 220. In the exemplaryembodiment, the thickness of the liquid crystal layer 3 may be in arange of about 2.0 μm to about 3.6 μm. In an exemplary embodiment, wherethe thickness of the liquid crystal layer 3 is increased, the thicknessof the light blocking member 220 is also increased.

The liquid crystal layer 3 disposed on the microcavity 305 may beinjected into the microcavity 305 using a capillary force, and thealignment layer may be disposed by the capillary force.

A roof layer 312 is disposed on the lower insulating layer 311. The rooflayer 312 supports the microcavity layer 305 and may effectively reducethe step generated by the microcavity layer 305 and the liquid crystallayer 3. The roof layer 312 may include the organic material.

An upper insulating layer 313 is disposed on the roof layer 312. Theupper insulating layer 313 may include the inorganic insulating materialsuch as silicon nitride (SiNx). In an exemplary embodiment, as shown inFIG. 31, the lower insulating layer 311, the roof layer 312 and theupper insulating layer 313 are disposed on the common electrodeconnection 271.

The roof layer 312 and the upper insulating layer 313 may be patternedalong with the lower insulating layer 311 to form the liquid crystalinjection hole.

According to an alternative exemplary embodiment, the lower insulatinglayer 311 and the upper insulating layer 313 may be omitted.

A polarizer (not shown) is positioned on the lower and upper insulatinglayers 311 and 313 of the insulation substrate 110. The polarizerincludes a polarization element for generating polarization and atri-acetyl-cellulose (TAC) layer for ensuring durability, and directionsof transmissive axes in an upper polarizer and a lower polarizer may besubstantially perpendicular or substantially parallel to each other.

An exemplary embodiment of a manufacturing method of a liquid crystaldisplay of FIG. 31 will be described with reference to FIG. 34 to FIG.41.

FIG. 34 to FIG. 41 are views showing an exemplary embodiment of amanufacturing method of the liquid crystal display of FIG. 31.

Firstly, FIG. 34A corresponds to FIG. 7A, and the process of FIG. 4 toFIG. 6 is applied to the exemplary embodiment of FIG. 31.

As shown in FIG. 4 to FIG. 6, in such an embodiment, firstly, a gateline 121 and a storage voltage line 131 are provided on an insulationsubstrate 110, and a gate insulating layer 140 covering the gate line121 and the storage voltage line 131 is provided thereon.

Next, semiconductors 151, 154 and 155, a data line 171, and source/drainelectrodes 173 a, 173 b, 173 c, 175 a, 175 b and 175 c are provided onthe gate insulating layer 140.

Next, a first passivation layer 180 is provided on the data conductors171, 173 a, 173 b, 173 c, 175 a, 175 b and 175 c and an exposed portionof the semiconductor 154 all over the region. Next, color filters 230are provided on the first passivation layer 180. When etching the colorfilter 230, the color filter 230 may be previously removed at theposition where the contact holes 186 a, 186 b and 186 c are provided.

Next, as shown in FIG. 34A to FIG. 34G, a light blocking member 220including the material through which the light is not transmitted isprovided on the color filter 230 and the first passivation layer 180. Insuch an embodiment, the light blocking member 220 (slashed portion ofFIG. 34G) is provided with the lattice structure having the openingcorresponding to the region displaying the image. The color filter 230is provided in the opening.

As shown in FIG. 34A, the light blocking member 220 has a portionextending in the horizontal direction according to the transistorformation region where the gate line 121, the storage voltage line 131,and the thin film transistor are provided and a portion extending in thevertical direction with respect to a region where the data line 171 isprovided.

An exemplary embodiment of providing the light blocking member 220 willbe described in detail with reference to FIG. 34B to FIG. 34G. Here,FIG. 34B, FIG. 34D and FIG. 34F correspond to FIG. 32, and FIG. 34C,FIG. 34E and FIG. 34G correspond to FIG. 33.

As shown in FIG. 34B and FIG. 34C, a material through which the light isnot transmitted is deposited on the first passivation layer 180 and thecolor filter 230.

Next, as shown in FIG. 34D and FIG. 34E, the material is exposed by themask 500 to form a light blocking member 220 of FIG. 34F and FIG. 34G.In the exemplary embodiment of FIG. 31, as shown in FIG. 34F, the heightof the light blocking member 220 is lower than the height of theexemplary embodiment of FIG. 22 in the region (hereinafter referred toas a connection region) where the common electrode connection 271passes. In the exemplary embodiment of FIG. 31, the light blockingmember 220 is provided with the predetermined height to obtain themicrocavity layer 305. This may be confirmed from the light blockingmember 220 provided at the right and left sides in FIG. 33, and thelight blocking member 220 to obtain the microcavity layer 305 may havethe height or thickness in a range of about 2.0 μm to about 3.6 μm. Inan exemplary embodiment, the mask 500 may include a transflective regionor a slit pattern where light is partially transmitted to control theheight of the light blocking member 220.

The light blocking member 220 may include the organic material for thespacer and the black color pigment for blocking the light.

In an exemplary embodiment, the side wall of the light blocking member220 is tapered. In an exemplary embodiment, the mask may include atransflective pattern or a slit pattern to control the exposure amountto provide the tapered side wall. In an alternative exemplaryembodiment, the tapered side wall may be naturally provided in theetching process without the transflective pattern or the slit pattern.

Referring to FIG. 34F and FIG. 34G, a second passivation layer 185 isprovided on substantially an entire region of the color filter 230 andthe light blocking member 220. The second passivation layer 185 mayinclude an inorganic insulator such as silicon nitride (SiNx) andsilicon oxide (SiOx), for example, or an organic insulator.

Next, a first contact hole 186 a and a second contact hole 186 b, whichexpose the first drain electrode 175 a and extensions 175 b′ of thesecond drain electrode 175 b, respectively, are provided in the colorfilter 230, the light blocking member 220, and the passivation layers180 and 185. A third contact hole 186 c which exposes the protrusion 134of the storage voltage line 131 and the extension 175 c′ of the thirddrain electrode 175 c is provided in the color filter 230, the lightblocking member 220, and the passivation layers 180 and 185.

Next, as shown in FIG. 35A to FIG. 35C, a pixel electrode 192 includinga first subpixel electrode 192 h and a second subpixel electrode 192 lis provided on the second passivation layer 185. In an exemplaryembodiment, the pixel electrode 192 may include a transparent conductivematerial such as ITO or IZO, for example. In such an embodiment, thefirst subpixel electrode 192 h and the second subpixel electrode 192 lare physically and electrically connected with the first drain electrode175 a and the second drain electrode 175 b through the contact holes 186a and 186 b. In such an embodiment, a connecting member 194 whichelectrically connects the extension 175 c′ of the third drain electrode175 c and the protrusion 134 of the storage voltage line 131 through thethird contact hole 186 c is also provided, such that part of the datavoltage applied to the second drain electrode 175 b is divided throughthe third source electrode 173 c, and the magnitude of the voltageapplied to the second subpixel electrode 192 l is thereby less than themagnitude of the voltage applied to the first subpixel electrode 192 h.

Next, as shown in FIG. 36A to 36C, a sacrificial layer 300 having anopening 301 and a connection 302 is provided. The sacrificial layer 300may be provided using the organic material such as a PR, and the PR isdeposited and is exposed, then developed and etched, by using the mask500 to complete the sacrificial layer 300. The sacrificial layer 300 isprovided in the region where the light blocking member 220 is notprovided such that the side wall of the light blocking member 220 andthe side wall of the sacrificial layer 300 correspond to each other. Asa result, the side wall of the sacrificial layer 300 is reverselytapered by corresponding to the tapered side wall of the light blockingmember 220. The sacrificial layer 300 has the opening 301 which ispositioned between a main body corresponding to a structure of amicrocavity and an adjacent main body at a position to form themicrocavity

In an exemplary embodiment, a width of the opening 301 may be about 2.5μm. In an exemplary embodiment, the height of the sacrificial layer 300may be substantially the same as the height of the second passivationlayer 185 at the upper surface of the light blocking member 220. In anexemplary embodiment, the connection 302 is provided at the positioncorresponding to the region (the liquid crystal injection hole openregion) that is etched in the process of providing the liquid crystalinjection hole 335.

Next, as shown in FIG. 37A to FIG. 37C, a common electrode 270 and alower insulating layer 311 are sequentially provided. That is, atransparent conductive material, such as ITO or IZO, for example, islaminated over substantially an entire region of the display panel, andthen a material of a support layer, which includes an inorganicinsulating material such as silicon nitride (SiNx), is laminated oversubstantially the entire region of the display panel. As a result, thelower insulating layer 311 is provided to cover the common electrode270.

Next, as shown in FIG. 38A to FIG. 38D, a roof layer 312 having anopening 312′ is provided on the liquid crystal injection hole openregion. The region provided at the right side and the left side of theopening 312′ is referred to as an opening peripheral area 312-1. Theroof layer 312 may include the organic material, and the roof layer 312is not provided on or exposes the region (hereinafter referred to as “aliquid crystal injection hole open region”) that is etched in theprocess of providing the liquid crystal injection hole 3, therebyforming the opening 312′. FIG. 38A shows the liquid crystal injectionhole open region corresponding to the thin film transistor formationregion. Also, the roof layer 312 is not provided in the correspondingregion, and in FIG. 38A to 38D, the common electrode 270 and the lowerinsulating layer 311 that are entirely provided are exposed.

In an exemplary embodiment of providing the roof layer 312, a materialfor the roof layer including the organic material is deposited insubstantially the entire region of the panel, exposed and developedusing a mask, and then the roof layer 312 is completed by removing thematerial for the roof layer at the portion of the liquid crystalinjection hole open region. In such an embodiment, the common electrode270 and the support layer 311 which are provided below the roof layer312 are not etched and are then exposed. In such an embodiment, in theopening 312′, only the sacrificial layer 300, the common electrode 270,and the lower insulating layer 311 are provided, and in the rest of theregion (including the opening peripheral area 312-1), the sacrificiallayer 300 or the opening 301, the common electrode 270, the lowerinsulating layer 311 and the roof layer 312 are provided.

Next, as shown FIG. 39A to FIG. 39C, a material for an upper insulatinglayer 313 including an inorganic insulating material such as siliconnitride (SiNx) is deposited.

Next, as shown in FIG. 40 and FIG. 41, the region corresponding to theliquid crystal injection hole open region is etched and exposed tocomplete an upper insulating layer 313 and a liquid crystal injectionhole 335 and to form a common electrode connection 271. As shown in FIG.41, the liquid crystal injection hole open region is not etched at theportion where the common electrode connection 271 is provided,differently from the exemplary embodiment of FIG. 1. As a result, commonelectrodes 270 are also connected to each other in the expansiondirection of the data line.

In an exemplary embodiment, the PR is provided on the entire region toetch the liquid crystal injection hole open region, the PR correspondingto the liquid crystal injection hole open region is removed to form aphotoresist pattern, and the liquid crystal injection hole open regionis etched according to the photoresist pattern. In such an embodiment,in the liquid crystal injection hole open region, the material 313 forthe upper insulating layer, the lower insulating layer 311, the commonelectrode 270 and the sacrificial layer 300 are etched and theunderlying layer is not etched. Also, the region where the commonelectrode connection 271 is provided is not etched. According to analternative exemplary embodiment, the sacrificial layer 300 may bepartially etched or may not be etched. In an exemplary embodiment, theprocess of etching the liquid crystal injection hole open region may bea dry etch process. In an alternative exemplary embodiment, when anetchant capable of etching several layers together exists, a wet etchprocess may be used.

Next, the sacrificial layer 300 is removed through the liquid crystalinjection hole open region to form a microcavity layer 305. In anexemplary embodiment, where the sacrificial layer 300 is provided by thePR, a process of removing the photoresist pattern provided on the upperinsulating layer 313 may be performed together. In such an embodiment,the photoresist pattern provided on the upper insulating layer 313together with the sacrificial layer 300 is immersed in an etchant (forexample, a photoresist stripper) for removing the photoresist pattern tobe wet-etched. According to the above process, the process of removingthe PR provided on the upper insulating layer 313 and the process ofremoving the sacrificial layer 300 may be performed together, such thatthe manufacturing process is substantially simplified. In an alternativeexemplary embodiment, where the sacrificial layer 300 is provided by amaterial other than the PR, the two processes may be separatelyperformed. In such an embodiment, the sacrificial layer 300 may bedry-etched.

As described above, when removing the sacrificial layer 300, theconnection 302 of the sacrificial layer 300 is together removed. As aresult, as shown in FIG. 32, the common electrode connection 271 isfloated, and is supported by the overlying lower insulating layer 311,roof layer 312 and upper insulating layer 313.

Thereafter, an alignment layer (not shown) or a liquid crystal materialis injected into the provided microcavity 305 by using the capillaryforce.

Although not shown, a process of sealing the microcavity layer 305 maybe performed to effectively prevent the liquid crystal layer 3 fromflowing outside of the microcavity layer 305.

In the above exemplary embodiment of FIG. 31, the common electrodeconnection 271 is provided such that the liquid crystal injection holeopen region is not etched at the position corresponding to the commonelectrode connection 271.

In an exemplary embodiment, where the common electrode connection 271 isprovided as in the exemplary embodiment of FIG. 31, the common voltageis also applied in the data line direction such that a drawback that thecommon voltage is deteriorated at the center of the display area iseffectively prevented or substantially reduced.

The exemplary embodiment of FIG. 31 has the common electrode connection271 as in the exemplary embodiment of FIG. 22. However, in the exemplaryembodiment of FIG. 22, the light blocking member 220 is provided toprotrude upwardly at the position of the formation of the commonelectrode connection 271, and the common electrode connection 271 ispositioned thereon such that the common electrode connection 271 issupported by the light blocking member 220. In the exemplary embodimentof FIG. 31, the connection 302 of the sacrificial layer is provided atthe position of the formation of the common electrode connection 271,and when removing the sacrificial layer 300, the connection 302 isremoved such that a space is provided under the common electrodeconnection 271. According to an exemplary embodiment, the liquid crystallayer 3 may be filled in at least a portion of the space under thecommon electrode connection 271. In the structure of the exemplaryembodiment of FIG. 31, the common electrode connection 271 is supportedby the overlying lower insulating layer 311, roof layer 312 and upperinsulating layer 313.

Next, another alternative exemplary embodiment of the invention will bedescribed with reference to FIG. 42.

FIG. 42 is a cross-sectional view of another alternative exemplaryembodiment of a liquid crystal display according to the invention.

In an exemplary embodiment, as shown in FIG. 42, the region D where theliquid crystal molecules may be misaligned is covered by the uppersurface of the light blocking member 220 in the microcavity layer 305having the tapered side wall as in the comparative example of FIG. 13.In the exemplary embodiment of FIG. 42, the common electrode 270 isdisposed substantially parallel to the insulation substrate 110 suchthat the electric field is not distorted.

The display device in FIG. 42 is substantially the same as the displaydevice shown in FIG. 2 except for the microcavity layer and the lowerinsulating layer. The same or like elements shown in FIG. 42 have beenlabeled with the same reference characters as used above to describe theexemplary embodiments of the display device shown in FIG. 2, and anyrepetitive detailed description thereof will hereinafter be omitted orsimplified.

In an exemplary embodiment, as shown in FIG. 42, the side wall of themicrocavity layer 305 has the tapered structure, and the side wall ofthe light blocking member 220 has the reversed tapered structurecorresponding to the side wall of the microcavity layer 305.

In an exemplary embodiment, as shown in FIG. 42, the lower insulatinglayer 311 is not disposed between the common electrode 270 and the rooflayer 312. In an alternative exemplary embodiment, the lower insulatinglayer 311 may be disposed between the common electrode 270 and the rooflayer 312.

Next, the exemplary embodiment of FIG. 42 will be described withreference to FIG. 1 and FIG. 42.

A gate line 121 and a storage voltage line 131 are disposed on aninsulation substrate 110 including a material, such as transparentglass, plastic, or the like. The gate line 121 includes a first gateelectrode 124 a, a second gate electrode 124 b and a third gateelectrode 124 c. The storage voltage line 131 includes storageelectrodes 135 a and 135 b and a protrusion 134 protruding toward thegate line 121. The storage electrodes 135 a and 135 b have a structuresurrounding a first subpixel electrode 192 h and a second subpixelelectrode 192 l of a previous pixel. A horizontal portion 135 b of thestorage electrode may be a wire connected with the horizontal portion135 b of the previous pixel, which are not separated from each other.

A gate insulating layer 140 is disposed on the gate line 121 and thestorage voltage line 131. A semiconductor 151 positioned below a dataline 171, a semiconductor 155 positioned below source/drain electrodes,and a semiconductor 154 positioned at a channel portion of a thin filmtransistor are disposed on the gate insulating layer 140.

A plurality of ohmic contacts (not shown) may be disposed on each of thesemiconductors 151 and 154 and between the data line 171 and thesource/drain electrodes.

Data conductors 171, 173 a, 173 b, 173 c, 175 a, 175 b, and 175 c, whichinclude a plurality of data lines 171 including a first source electrode173 a and a second source electrode 173 b, a first drain electrode 175a, a second drain electrode 175 b, a third source electrode 173 c, and athird drain electrode 175 c, are disposed on the semiconductors 151 and154 and the gate insulating layer 140.

The first gate electrode 124 a, the first source electrode 173 a and thefirst drain electrode 175 a collectively define a first thin filmtransistor together with the semiconductor 154, and a channel of thethin film transistor is disposed at the semiconductor portion 154between the first source electrode 173 a and the first drain electrode175 a. The second gate electrode 124 b, the second source electrode 173b and the second drain electrode 175 b collectively define a second thinfilm transistor together with the semiconductor 154, and a channel ofthe thin film transistor is disposed at the semiconductor portion 154between the second source electrode 173 b and the second drain electrode175 b. The third gate electrode 124 c, the third source electrode 173 cand the third drain electrode 175 c collectively define a third thinfilm transistor together with the semiconductor 154, and a channel ofthe thin film transistor is disposed at the semiconductor portion 154between the third source electrode 173 c and the third drain electrode175 c.

The data line 171 has a structure in which a width becomes decreased ina forming region of the thin film transistor in the vicinity of anextension 175 c′ of the third drain electrode 175 c such that aninterval with the adjacent wiring is substantially maintained and signalinterference is substantially reduced, but not being limited thereto.

A first passivation layer 180 is disposed on the data conductors 171,173 a, 173 b, 173 c, 175 a, 175 b and 175 c and an exposed portion ofthe semiconductor 154. The first passivation layer 180 may include aninorganic insulator such as silicon nitride (SiNx) and silicon oxide(SiOx), for example, or an organic insulator.

A color filter 230 is disposed on the passivation layer 180. Colorfilters 230 of the same color are disposed in the pixels adjacent in avertical direction (a data line direction). In such an embodiment, colorfilters 230 and 230′ of different colors are disposed in the pixelsadjacent in a horizontal direction (a gate line direction), and twocolor filters 230 and 230′ adjacent in the horizontal direction mayoverlap each other on the data line 171. The color filters 230 and 230′may display one of primary colors such as three primary colors of red,green and blue, but not being limited thereto. In an alternativeexemplary embodiment, the color filters 230 and 230′ may also displayone of cyan, magenta, yellow and white colors, for example.

The second passivation layer 185 is disposed on the color filters 230and 230′. The second passivation layer 185 may include an inorganicinsulator such as silicon nitride (SiNx) and silicon oxide (SiOx), forexample, or an organic insulator. According to an alternative exemplaryembodiment, the second passivation layer 185 may include the organicinsulator.

A first contact hole 186 a and a second contact hole 186 b, which exposethe first drain electrode 175 a and extensions 175 b′ of the seconddrain electrode 175 b, respectively, are defined, e.g., formed, in thecolor filter 230 and the passivation layers 180 and 185. A third contacthole 186 c which exposes the protrusion 134 of the storage voltage line131 and the extension 175 c′ of the third drain electrode 175 c isdefined, e.g., formed, in the color filter 230, the light blockingmember 220 and the passivation layers 180 and 185.

In an exemplary embodiment, the color filter 230 may further include thecontact holes 186 a, 186 b and 186 c. In an exemplary embodiment, wherethe etching of the contact hole may not be efficiently performedaccording to the material of the color filter 230 compared with thepassivation layers 180 and 185, when etching the color filter 230, thecolor filter 230 may be previously removed at the position where thecontact holes 186 a, 186 b, and 186 c are formed.

A pixel electrode 192 including a first subpixel electrode 192 h and asecond subpixel electrode 192 l is disposed on the second passivationlayer 185. The pixel electrode 192 may include a transparent conductivematerial such as ITO or IZO, for example.

The first subpixel electrode 192 h and the second subpixel electrode 192l are adjacent to each other in a column direction, have an entirelyquadrangular shape, and include a cross stem including a transverse stemand a longitudinal stem crossing the transverse stem. In such anembodiment, the first subpixel electrode 192 h and the second subpixelelectrode 192 l are divided into four subregions by the transverse stemand the longitudinal stem, and each subregion includes a plurality ofminute branches.

The minute branches of the first subpixel electrode 192 h and the secondsubpixel electrode 192 l form angles in a range of about 40 degrees to45 degrees with the gate line 121 or the transverse stem. In such anembodiment, the minute branches of two adjacent subregions may beperpendicular to each other. In such an embodiment, a width of theminute branch may become gradually increased or intervals between theminute branches 194 may be different from each other.

The first subpixel electrode 192 h and the second subpixel electrode 192l are physically and electrically connected to the first drain electrode175 a and the second drain electrode 175 b through the contact holes 186a and 186 b, and receive data voltages from the first drain electrode175 a and the second drain electrode 175 b.

In an exemplary embodiment, a connecting member 194 electricallyconnects the extension 175 c′ of the third drain electrode 175 c and theprotrusion 134 of the storage voltage line 131 through the third contacthole 186 c. In such an embodiment, part of the data voltage applied tothe second drain electrode 175 b is divided through the third sourceelectrode 173 c and thus the magnitude of the voltage applied to thesecond subpixel electrode 192 l may be less than the magnitude of thevoltage applied to the first subpixel electrode 192 h.

In an exemplary embodiment, an area of the second subpixel electrode 192l may be about twice an area of the first subpixel electrode 192 h.

In an exemplary embodiment, an opening for collecting gas dischargedfrom the color filter 230 and an overcoat covering the correspondingopening with the same material as the pixel electrode 192 thereon may bedisposed on the second passivation layer 185. The opening and theovercoat block the gas discharged from the color filter 230 from beingtransferred to another element. In an alternative exemplary embodiment,the opening may be omitted.

A light blocking member (black matrix; 220) is disposed in the regionwhere the pixel electrode 192 is not disposed on the second passivationlayer 185. The light blocking member 220 is disposed at a region(hereafter referred to as “a transistor formation region”) where thegate line 121, the thin film transistor, and the data line 171 aredisposed, and has a lattice structure having openings corresponding to aregion where an image is displayed. The color filter 230 and the pixelelectrode 192 may include the opening of the light blocking member 220.In such an embodiment, the light blocking member 220 may include amaterial through which light is not transmitted. In such an embodiment,the light blocking member 220 has a height greater than the height ofthe microcavity layer into which the liquid crystal layer 3 (shown inFIGS. 2 and 3) is injected.

In an exemplary embodiment, the side wall of the light blocking member220 is disposed with the reversed taper structure, thereby having thereversed taper side wall, and the angle of the reversed taper side wallmay be various in exemplary embodiments. By the reversed taper sidewall, the upper surface of the light blocking member 220 has a structureof a wide area. As a result, the liquid crystal molecules 310 aremisaligned by the upper surface of the light blocking member 220 throughthe light blocking member 220 in the region D.

The side wall of the light blocking member 220 corresponds to the sidewall of the microcavity layer 305. In such an embodiment, the side wallof the microcavity layer 305 in which the liquid crystal layer 3 ispositioned has the taper structure. The microcavity layer 305 isdisposed by forming and removing the sacrificial layer 300, and in anexemplary embodiment of a manufacturing method of the exemplaryembodiment of FIG. 42, the sacrificial layer 300 is firstly provided tohave the tapered structure and then the light blocking member 220 isprovided to be filled between the side wall of the sacrificial layer300, thereby having the reversed taper side wall.

In an exemplary embodiment, a common electrode 270 is disposed on theliquid crystal layer 3 injected into the microcavity layer 305 on thesecond passivation layer 185 and the pixel electrode 192. The commonelectrode 270 has horizontal substantially planar structuresubstantially parallel to the insulation substrate 110 corresponding tothe height of the light blocking member 220. In such an embodiment, thecommon electrode 270 is separated from the pixel electrode 192 by apredetermined distance such that a short circuit is effectivelyprevented, and the common electrode 270 may not be bent according to theside of the microcavity layer 305 such that the electric field is notdistorted. The height or level of the common electrode 270 may besubstantially maintained on the microcavity layer by the support of aroof layer 312 that will be described later. In such an embodiment, thecommon electrode 270 is not disposed at the portion of the liquidcrystal injection hole 335, thereby having a structure that extends inthe direction of the gate line (a left and right direction).

The common electrode 270 may include a transparent conductive materialsuch as ITO or IZO, for example, and generates an electric fieldtogether with the pixel electrode 192 to control an alignment directionof liquid crystal molecules 310.

Although not shown in FIG. 42, a lower insulating layer 311 may bedisposed on the common electrode 270 in an alternative exemplaryembodiment. The lower insulating layer 311 may have the liquid crystalinjection hole 335 disposed at one side to inject the liquid crystalinto the microcavity layer 305. The lower insulating layer 311 mayinclude the inorganic insulating material such as silicon nitride(SiNx). The liquid crystal injection hole 335 may be used even when asacrificial layer provided to form the microcavity 305 is removed.

A roof layer 312 is disposed on the common electrode 270 or the lowerinsulating layer 311. The roof layer 312 may have a supporting functionto define the microcavity layer between the pixel electrode 192 and thecommon electrode 270. The roof layer 312 has the function of supportingthe microcavity layer 305 by the predetermined thickness on the commonelectrode 270, and may have the liquid crystal injection hole 335 at oneside such that the liquid crystal is injected into the microcavity layer305.

An upper insulating layer 313 is disposed on the roof layer 312. Theupper insulating layer 313 may include the inorganic insulating materialsuch as silicon nitride (SiNx). The roof layer 312 and the upperinsulating layer 313 may be patterned along with the lower insulatinglayer 311 to form the liquid crystal injection hole.

In an alternative exemplary embodiment, the upper insulating layer 313may also be omitted.

In an exemplary embodiment, an alignment layer (not shown) may bedisposed below the common electrode 270 and above the pixel electrode192 to arrange the liquid crystal molecules injected in the microcavity305. The alignment layer may include at least one of materials such aspolyamic acid, polysiloxane, or polyimide.

A liquid crystal layer 3 is disposed in the microcavity 305 (e.g., inthe alignment layer disposed in the microcavity 305). The liquid crystalmolecules 310 are initially aligned by the alignment layer, and thealignment direction is changed according to the electric field generatedtherein. The height of the liquid crystal layer 3 corresponds to theheight of the microcavity layer 305, and the height of the microcavitylayer 305 corresponds to the height of the light blocking member 220. Inan exemplary embodiment, the height or thickness of the liquid crystallayer 3 may be in a range of about 2.0 μm to about 3.6 μm. In such anembodiment, where the thickness of the liquid crystal layer 3 isincreased, the thickness of the light blocking member 220 is alsoincreased.

The liquid crystal layer 3 disposed on the microcavity 305 may beinjected into the microcavity 305 using a capillary force, and thealignment layer may be disposed by the capillary force.

In an alternative exemplary embodiment, the lower insulating layer 311and the upper insulating layer 313 may be omitted. The polarizerincludes a polarization element for generating polarization and a TAClayer for ensuring durability, and directions of transmissive axes in anupper polarizer and a lower polarizer may be substantially perpendicularor substantially parallel to each other.

In an exemplary embodiment, as shown in FIG. 42, the side wall of themicrocavity layer 305 has the taper structure such that the liquidcrystal molecules 310 may be misaligned near the side wall of themicrocavity layer 305. In the exemplary embodiment of FIG. 42, the uppersurface of the light blocking member 220 is substantially wide such thatthe region where the liquid crystal molecules 310 are misaligned may becovered by the light blocking member 220, thereby not being recognizedby the user. Also, in the exemplary embodiment of FIG. 42, the commonelectrode 270 has the substantially planar structure substantiallyparallel to the insulation substrate 110 such that the electric field isnot distorted.

While this invention has been described in connection with what ispresently considered to be practical exemplary embodiments, it is to beunderstood that the invention is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

What is claimed is:
 1. A liquid crystal display comprising: aninsulation substrate; a microcavity layer disposed on the insulationsubstrate and having a reversed taper side wall; a pixel electrodedisposed in the microcavity layer on the insulation substrate; a liquidcrystal layer disposed in the microcavity layer; a light blocking membercomprising a first light blocking member disposed at a first side of themicrocavity layer, and a second light blocking member disposed at asecond side of the microcavity layer; and a common electrode whichcovers the liquid crystal layer and the first light blocking member,wherein a distance from an upper surface of the insulation substrate toan upper surface of the first light blocking member is longer than adistance from the upper surface of the insulation substrate to an uppersurface of the second light blocking member.
 2. The liquid crystaldisplay of claim 1, wherein the first light blocking member has atapered side wall corresponding to the reversed taper side wall of themicrocavity layer.
 3. The liquid crystal display of claim 2, wherein aheight of the light blocking member corresponds to a height of the firstmicrocavity layer.
 4. The liquid crystal display of claim 3, wherein thecommon electrode has a substantially planar structure.
 5. The liquidcrystal display of claim 4, further comprising: a second passivationlayer disposed between the first light blocking member and the commonelectrode, and a height of the second passivation layer disposed on thefirst light blocking member is substantially the same as the height ofthe microcavity layer.
 6. The liquid crystal display of claim 5, whereinthe common electrode is disposed substantially parallel to theinsulation substrate corresponding to the height of the secondpassivation layer on the first light blocking member.
 7. The liquidcrystal display of claim 3, wherein the common electrode has a curvedstructure near the light blocking member.
 8. The liquid crystal displayof claim 7, wherein the common electrode has a curved upper structurenear the light blocking member.
 9. The liquid crystal display of claim1, further comprising: a roof layer which covers the common electrode.10. The liquid crystal display of claim 9, wherein a liquid crystalinjection hole is defined in the roof layer.
 11. The liquid crystaldisplay of claim 10, wherein the liquid crystal injection hole ispositioned at a thin film transistor formation region.
 12. The liquidcrystal display of claim 11, wherein the common electrode exposes theliquid crystal injection hole.
 13. The liquid crystal display of claim12, wherein the common electrode has a structure extending in onedirection, and the common electrode comprises a common electrodeconnection which connects portions of the common electrode in adirection substantially perpendicular to the one direction.
 14. Theliquid crystal display of claim 13, wherein the common electrodeconnection is disposed on the first light blocking member and issupported by the first light blocking member.
 15. The liquid crystaldisplay of claim 13, wherein the common electrode connection issupported by the roof layer.
 16. The liquid crystal display of claim 1,wherein the pixel electrode comprises a stem, and a plurality of minutebranches extending from the stem.
 17. A liquid crystal displaycomprising: an insulation substrate; a microcavity layer disposed on theinsulation substrate; a pixel electrode disposed in the microcavitylayer on the insulation substrate; a liquid crystal layer disposed inthe microcavity layer; a light blocking member comprising a first lightblocking member disposed at a first side of the microcavity layer, and asecond light blocking member disposed at a second side of themicrocavity layer; and a common electrode which covers the liquidcrystal layer and the first light blocking member, wherein a height ofthe first light blocking member is substantially equal to or greaterthan a height of the microcavity layer, and wherein a distance from anupper surface of the insulation substrate to an upper surface of thefirst light blocking member is longer than a distance from the uppersurface of the insulation substrate to an upper surface of the secondlight blocking member.
 18. The liquid crystal display of claim 17,wherein the microcavity layer has a reversed taper side wall.
 19. Theliquid crystal display of claim 18, wherein the first light blockingmember has a taper side wall corresponding to the reversed taper sidewall of the microcavity layer on the insulation substrate.
 20. Theliquid crystal display of claim 17, wherein the microcavity layer has atapered side wall.
 21. The liquid crystal display of claim 20, whereinthe first light blocking member has a reversed tapered side wallcorresponding to the tapered side wall of the microcavity layer on theinsulation substrate.
 22. The liquid crystal display of claim 17,wherein the height of the first light blocking member corresponds to theheight of the microcavity layer.
 23. The liquid crystal display of claim22, wherein the common electrode has a substantially planar structuresubstantially horizontal to the insulation substrate.
 24. The liquidcrystal display of claim 23, further comprising: a second passivationlayer disposed between the first light blocking member and the commonelectrode, and a height of the second passivation layer on the firstlight blocking member is substantially the same as the height of themicrocavity layer.
 25. The liquid crystal display of claim 24, whereinthe common electrode is disposed substantially parallel to theinsulation substrate corresponding to the height of the secondpassivation layer on the first light blocking member.
 26. The liquidcrystal display of claim 22, wherein the common electrode has a curvedstructure near the light blocking member.
 27. The liquid crystal displayof claim 26, wherein the common electrode has a curved upper structurenear the light blocking member.
 28. The liquid crystal display of claim17, further comprising: a roof layer which covers the common electrode.29. The liquid crystal display of claim 28, wherein a liquid crystalinjection hole is defined in the roof layer.
 30. The liquid crystaldisplay of claim 29, wherein the liquid crystal injection hole ispositioned at a thin film transistor formation region.
 31. The liquidcrystal display of claim 30, wherein the common electrode exposes theliquid crystal injection hole.
 32. The liquid crystal display of claim31, wherein the common electrode has a structure extending in onedirection, and the common electrode comprises a common electrodeconnection which connects portions of the common electrode in adirection perpendicular to the one direction.
 33. The liquid crystaldisplay of claim 32, wherein the common electrode connection is disposedon the first light blocking member and is supported by the first lightblocking member.
 34. The liquid crystal display of claim 31, wherein thecommon electrode connection is supported by the roof layer.